Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing

Jian Lin; Dongge Ma
September 2008
Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p093505
Academic Journal
A nonvolatile write-once-read-many-time (WORM-time) memory device based on poly(N-vinylcarbazole) (PVK) films was realized by thermally annealing. The device can be fabricated using a simple spin coat method. It was found that the control of PVK film surface morphology by thermally annealing plays an important role in achieving the WORM memory properties. The memory device showed an ON/OFF current ratio as high as 104 and the retention time was over 2000 s without degradation. The formation and damage of the interface dipole at different electric fields have been attributed to the switching transition processes, leading to the transition from an Ohmic current of ON state to a tunneling injection limited current of OFF state. The achievement of easily fabricating WORM memory device based on soluble PVK film opens up an application field for polymer materials in organic electronics.


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