Polarization of defect related optical transitions in chalcopyrites

Hönes, Katja; Eickenberg, Michael; Siebentritt, Susanne; Persson, Clas
September 2008
Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p092102
Academic Journal
We investigate the symmetry of shallow acceptors in Cu chalcopyrites by polarization dependent photoluminescence measurements and density functional calculations. We determine the influence of the band symmetry versus the site symmetry. The polarization of the emitted or absorbed light is parallel to the c-axis in the case of CuGaSe2 and perpendicular to the c-axis in the case of CuInSe2. The symmetry of the defects depends in each case on the symmetry of the topmost band. Neither does the site symmetry affect the defect symmetry nor do the defects change the symmetry of the band.


Related Articles

  • chal·co·py·rite.  // American Heritage Student Science Dictionary;2009, p66 

    A definition of the term "chalcopyrite" is presented. It refers to a yellow metallic mineral consisting of iron, copper, and sulfur. Chalcopyrite usually occurs as shapeless masses of grains and is an important ore of copper. Because of its shiny look and often yellow color, it is sometimes...

  • Surface polarities of sputtered epitaxial CuInSe2 and Cu1In3Se5 thin films grown on GaAs (001) substrates. Yang, L.-C.; Chen, G. S.; Rockett, A. // Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p201907 

    Epitaxial CuInSe2 and Cu1In3Se5 films have been synthesized on GaAs(001) by cosputtering Cu/In and evaporating Se method. Scanning electron micrograph results show that surface morphologies of CuInSe2 and Cu1In3Se5 epitaxial films are substantially different. The rectangular pits of CuInSe2...

  • Raman Spectra of the CuAu Phase of AgGaSe2 Grown on [100] GaAs substrate. Choi, I. H.; Yu, P. Y. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p133 

    The Raman spectra of AgGaSe2 expitaxial films with the CuAu phase grown on GaAs substrate has been measured and compared with those obtained from the more common chalcopyrite phase. These spectra suggest that the CuAu phase films are contaminated by ∼10% of the chalcopyrite phase while its...

  • Metastability of CuInS2 and its implications on thin-film growth. Hahn, Thomas; Cieslak, Janko; Metzner, Heinrich; Eberhardt, Jens; Reislöhner, Udo; Gossla, Mario; Witthuhn, Wolfgang; Kräußlich, Jürgen // Applied Physics Letters;4/24/2006, Vol. 88 Issue 17, p171915 

    Thin layers of the ternary chalcopyrite semiconductor CuInS2 grown epitaxially on Si(001) substrates were investigated with respect to the existing phases and their lattice parameters by means of x-ray diffraction at the European Synchrotron Radiation Facility in Grenoble (France). The...

  • CHALCOPYRITE.  // Peterson Field Guide to Rocks & Minerals;1996, p113 

    The article provides information on chalcopyrite, a generic copper ore that is common in multitemperature sulfide veins, and often disseminated through porphyritic igneous rocks. It is often confused with gold, but is brittle, crushes to a green-black powder, gives black streak, and dissolves in...

  • Properties of a CuAu phase of AgGaSe2 grown on [100] GaAs substrate. Choi, I. H.; Yu, P. Y. // Applied Physics Letters;12/5/2005, Vol. 87 Issue 23, p231909 

    Recently, it has been suggested theoretically [A. Janotti and S.-H. Wei, Appl. Phys. Lett. 81, 3957 (2002)] that, if AgGaSe2 with the CuAu structure can be grown epitaxially on ZnSe, it will be an excellent source for spin-polarized electrons. Here we report the growth and properties of...

  • Zn(O,OH) layers in chalcopyrite thin-film solar cells: Valence-band maximum versus composition. Bär, M.; Reichardt, J.; Grimm, A.; Kötschau, I.; Lauermann, I.; Rahne, K.; Sokoll, S.; Lux-Steiner, M. C.; Fischer, Ch.-H.; Weinhardt, L.; Umbach, E.; Heske, C.; Jung, Ch.; Niesen, T. P.; Visbeck, S. // Journal of Applied Physics;9/1/2005, Vol. 98 Issue 5, p053702 

    Zn(O,OH) layers deposited by the ion layer gas reaction (ILGAR) technique have the potential to replace the conventionally used CdS buffer layer in Cu(In(1-X)GaX)(SYSe(1-Y))2-based thin-film solar cells. To avoid stability issues, the fraction of metastable Zn(OH)2 should be reduced in the final...

  • Anisotropic thermal anharmonicity of CdSiP2 and ZnGeP2: Ab initio calculations. Wei, Lei; Zhang, Guodong; Fan, Weiliu; Li, Yanlu; Yang, Lei; Zhao, Xian // Journal of Applied Physics;Dec2013, Vol. 114 Issue 23, p233501 

    The anisotropic thermal anharmonicity of CdSiP2 and ZnGeP2 has been studied by calculating the a- and c-axial Grüneisen parameters separately to cast light on the mechanism of anisotropic thermal expansivity of ABC2 chalcopyrite compounds. Both the Debye model and lattice dynamics theory were...

  • Photoluminescence studies in CuInS2 thin films grown by sulfurization using ditertiarybutylsulfide. Liu, X. H.; Dou, X. M.; Sugiyama, M. // Journal of Applied Physics;12/15/2012, Vol. 112 Issue 12, p123521 

    The defect-related levels of CuInS2 thin films prepared by sulfurization using ditertiarybutylsulfide [(t-C4H9)2S:DTBS] have been investigated by photoluminescence (PL) spectroscopy. The PL spectra exhibit four peaks at 1.43, 1.27, 1.21, and 1.17 eV. On the basis of the PL spectra observed at...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics