Hybrid metamaterials enable fast electrical modulation of freely propagating terahertz waves

Hou-Tong Chen; Palit, Sabarni; Tyler, Talmage; Bingham, Christopher M.; Zide, Joshua M. O.; O'Hara, John F.; Smith, David R.; Gossard, Arthur C.; Averitt, Richard D.; Padilla, Willie J.; Jokerst, Nan M.; Taylor, Antoinette J.
September 2008
Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p091117
Academic Journal
We demonstrate fast electrical modulation of freely propagating terahertz waves at room temperature using hybrid metamaterial devices. The devices are planar metamaterials fabricated on doped semiconductor epitaxial layers, which form hybrid metamaterial—Schottky diode structures. With an applied ac voltage bias, we show modulation of terahertz radiation at inferred frequencies over 2 MHz. The modulation speed is limited by the device depletion capacitance which may be reduced for even faster operation.


Related Articles

  • Microwaves in dispersive magnetic composite media (Review Article). Tarapov, S. I.; Belozorov, D. P. // Low Temperature Physics;Jul2012, Vol. 38 Issue 7, p603 

    Review discusses some special questions of physics of composite media (metamaterials), which are formed by elements made from natural materials of two kinds. The first ones are 'carriers of permittivity' and are presented by plasma-like media and semiconductors. The second ones are 'carriers of...

  • Doping effect of buckminsterfullerene in poly(2,5-dialkoxy-p-phenylene vinylene). Morita, Shigenori; Kiyomatsu, Shinji; Yin, Xiao Hong; Zakhidov, Anvar A.; Noguchi, Takanobu; Ohnishi, Toshihiro; Yoshino, Katsumi // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2860 

    Examines the characteristics of C[sub30] doped poly(2,5-dialkoxy-p-phenylene vinylene) (RO-PPV). Preparation of RO-PPV; Temperature dependence of the electrical conductivity of poly(2,5-dioctyloxy-p-phenylene vinylene).

  • Growth of epitaxial p-type ZnO thin films by codoping of Ga and N. Kumar, Manoj; Tae-Hwan Kim; Sang-Sub Kim; Byung-Teak Lee // Applied Physics Letters;9/11/2006, Vol. 89 Issue 11, p112103 

    Codoping of Ga and N was utilized to realize p-type conduction in ZnO films using rf magnetron sputtering. The films obtained at 550 °C on sapphire showed resistivity and hole concentrations of 38 Ω cm and 3.9 × 1017 cm-3, respectively. ZnO films also showed a p-type behavior on p-Si...

  • Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current: An advanced model. Micard, G.; Hahn, G.; Zuschlag, A.; Seren, S.; Terheiden, B. // Journal of Applied Physics;Aug2010, Vol. 108 Issue 3, p034516 

    We present an advanced analytical model which applies to light beam induced current contrast profiles to determine reliably the effective surface recombination velocities (Seff) of grain boundaries (GBs) and diffusion lengths (Ldiff) in the grains, in cases where a GB is close to the studied one...

  • Effect of Co Substitution on the Structure and Superconducting Properties of GaSr(Tm,Ca)CuO. Lee, H. // Journal of Superconductivity & Novel Magnetism;Jul2011, Vol. 24 Issue 5, p1381 

    The crystal structures of two samples with nominal compositions of GaSr(TmCa)CuO and (GaCo)Sr(TmCa)CuO have been analyzed by using neutron powder diffraction techniques to clarify the structural mechanisms associated with changes in superconducting behavior. Unlike for the Co-free sample, which...

  • Enhanced annealing of the Z1/2 defect in 4H–SiC epilayers. Storasta, Liutauras; Tsuchida, Hidekazu; Miyazawa, Tetsuya; Ohshima, Takeshi // Journal of Applied Physics;Jan2008, Vol. 103 Issue 1, p013705 

    The authors investigated the application of the carbon-implantation/annealing method for the annealing of the main lifetime limiting defect Z1/2 in thick 4H–SiC epilayers. Examination of different implantation doses and annealing temperatures showed that finding the optimum conditions is...

  • Spectroscopic study of V doped Hg0.018Cd0.981Mn0.001Te bulk crystals as near-infrared materials for optical applications. Gnatenko, Yu. P.; Bukivskij, P. M.; Piryatinski, Yu. P.; Faryna, I. O.; Shigiltchoff, O. A.; Gamernyk, R. V. // Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p112109 

    It was shown that the photosensitivity region of the semi-insulating V doped Hg0.018Cd0.981Mn0.001Te crystals extends up to 1800 nm and is caused by the electron photogeneration resulting in the transitions from the main 4T1(F) state to the excited 4A2(F)- and 4T1(P) states of V2+ ions, which...

  • Precise lattice location of substitutional and interstitial Mg in AlN. Amorim, L. M.; Wahl, U.; Pereira, L. M. C.; Decoster, S.; Silva, D. J.; da Silva, M. R.; Gottberg, A.; Correia, J. G.; Temst, K.; Vantomme, A. // Applied Physics Letters;Dec2013, Vol. 103 Issue 26, p262102 

    The lattice site location of radioactive 27Mg implanted in AlN was determined by means of emission channeling. The majority of the 27Mg was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedral interstitial site. The activation energy for...

  • Electronic and Structural Transitions in Pb1 – xGexTe:Ga Alloys under Pressure. Skipetrov, E. P.; Zvereva, E. A.; Volkova, O. S.; Golubev, A. V.; Mollaev, A. Yu.; Arslanov, R. K.; Slyn'ko, V. E. // Semiconductors;Oct2004, Vol. 38 Issue 10, p1164 

    The effect of pressure on electrical properties of Ga-doped n-Pb1 – xGexTe alloys (x = 0.06, 0.08) is studied. The pressure dependence of the activation energy of a deep Ga impurity center is obtained. It is shown that the position of the Ga level with respect to the bottom of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics