Direct observation/characterization of spatial distribution of current leakage spots in zinc oxide/aluminum nitride thin film precursor field effect transistor structures using conducting atomic force microscopy

Dey, Shirshendu; Jejurikar, Suhas M.; Adhi, K. P.; Dharmadhikari, C. V.
September 2008
Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p093510
Academic Journal
Charge transport across pulsed laser deposited zinc oxide (ZnO)/aluminum nitride (AlN)/Si(100) thin film structures has been studied using conducting atomic force microscopy at different stages of sample preparation. The spatial coverage of current leakage spots could be directly imaged, characterized, and shown to exhibit hysteresis against applied bias voltage. Current-voltage (I-V) measurements on both AlN and ZnO/AlN/Si(100) structure exhibited asymmetric nonlinear behavior with a large zero current region. Further analysis of I-V and current-force data suggests Fowler–Nordheim like behavior under Hertzian contact as a dominant mechanism for electron transport.


Related Articles

  • Direct patterning of organic light-emitting devices by organic-vapor jet printing. Yiru Sun; Shtein, Max; Forrest, Stephen R. // Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p113504 

    We demonstrate small molecular weight, fluorescent organic light-emitting devices directly patterned by organic-vapor jet printing (OVJP). In OVJP, a hot inert carrier gas picks up a molecular organic vapor that expands when passed through a nozzle, resulting in physisorption of the molecules...

  • Electrical characterization of zinc oxide/aluminum nitride thin film precursor field effect transistor structures: A conducting atomic force microscopy and density functional theoretical study. Dey, Shirshendu; Jejurikar, Suhas; Bhattacharya, Somesh Kumar; Banerji, Anirban; Adhi, K. P.; Dharmadhikari, C. V. // Journal of Applied Physics;Nov2010, Vol. 108 Issue 9, p094510 

    Electrical transport across pulsed laser deposited zinc oxide (ZnO)/aluminum nitride (AlN)/Si(100) thin film structures has been studied using conducting atomic force microscopy. Current versus voltage spectroscopy performed on the samples with varying AlN layer thickness (t), revealed...

  • Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide. Bubel, S.; Meyer, S.; Kunze, F.; Chabinyc, M. L. // Applied Physics Letters;10/7/2013, Vol. 103 Issue 15, p152102 

    In low-temperature solution processed amorphous zinc oxide (a-ZnO) thin films, we show the thin film transistor (TFT) characteristics for the trap-filled limit (TFL), when the quasi Fermi energy exceeds the conduction band edge and all tail-states are filled. In order to apply gate fields that...

  • The Effect of the Oxidation Time on the Optical and Structural Properties of ZnO Thin Film. Al-Hardan, N. H.; Abdullah, M. J.; Aziz, A. A.; Hamid, H. A. // AIP Conference Proceedings;Mar2010, Vol. 1217 Issue 1, p341 

    Zinc oxide (ZnO) films were synthesized by thermal oxidation of metallic zinc films in normal atmosphere at 600° C. The influence of oxidation time ranging from 1 to 3 hr on the structural and optical properties of ZnO films was investigated. The films show polycrystalline structure with c...

  • Conductive atomic force microscopy study of local electronic transport in ZnTe thin films. Kshirsagar, Sachin D.; Krishna, M. Ghanashyam; Tewari, Surya P. // AIP Conference Proceedings;Feb2013, Vol. 1512 Issue 1, p642 

    ZnTe thin films obtained by the electron beam evaporation technique were subjected to thermal annealing at 500°C for 2 hours. The as deposited films were amorphous but transformed to the crystalline state under influence of the thermal treatment. There is increase in optical absorption due to...

  • Effects of Co content on the structural, luminescence, and ferromagnetic properties of Zn1-xCoxSy films. Ni, Wei-Shih; Lin, Yow-Jon // Journal of Applied Physics;Sep2012, Vol. 112 Issue 6, p063712 

    This study investigates the effect of Co content on the structural, luminescence, and ferromagnetic properties of sol-gel Zn1-xCoxSy films by x-ray diffraction, photoluminescence, energy dispersive spectrometer, atomic force microscopy, and alternating gradient magnetometer measurements. It is...

  • Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors. Chang-Jung Kim; Sangwook Kim; Je-Hun Lee; Jin-Seong Park; Sunil Kim; Jaechul Park; Eunha Lee; Jaechul Lee; Youngsoo Park; Joo Han Kim; Sung Tae Shin; U.-In Chung // Applied Physics Letters;12/21/2009, Vol. 95 Issue 25, p252103 

    We developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as oxide semiconductors and investigated the films electrically and physically. Adding of hafnium (Hf) element can suppress growing the columnar structure and drastically decrease the carrier concentration and hall mobility in...

  • Electron transport properties of Si nanosheets: Transition from direct tunneling to Fowler-Nordheim tunneling. Ikuno, Takashi; Okamoto, Hirotaka; Sugiyama, Yusuke; Nakano, Hideyuki; Yamada, Fumihiko; Kamiya, Itaru // Applied Physics Letters;7/11/2011, Vol. 99 Issue 2, p023107 

    We have characterized the electron transport properties of n-decylamine-functionalized Si nanosheets (NSs) using atomic force microscopy with a conductive cantilever under vacuum conditions at room temperature. Electrons are transported from the cantilever to the substrate through Si NSs. The Si...

  • Manganese-doped zinc oxide tetratubes and their photoluminescent properties. Xu, C. X.; Sun, X. W.; Dong, Z. L.; Tan, S. T.; Cui, Y. P.; Wang, B. P. // Journal of Applied Physics;12/1/2005, Vol. 98 Issue 11, p113513 

    Based on vapor-phase transport method, manganese-doped zinc oxide (ZnO:Mn) tetropod whiskers were fabricated. The pods of the ZnO:Mn whiskers show hexagonal hollow shape with multitips at the front. X-ray diffraction and high-resolution transmission electron microscopy demonstrate that the tube...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics