TITLE

Direct observation/characterization of spatial distribution of current leakage spots in zinc oxide/aluminum nitride thin film precursor field effect transistor structures using conducting atomic force microscopy

AUTHOR(S)
Dey, Shirshendu; Jejurikar, Suhas M.; Adhi, K. P.; Dharmadhikari, C. V.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p093510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Charge transport across pulsed laser deposited zinc oxide (ZnO)/aluminum nitride (AlN)/Si(100) thin film structures has been studied using conducting atomic force microscopy at different stages of sample preparation. The spatial coverage of current leakage spots could be directly imaged, characterized, and shown to exhibit hysteresis against applied bias voltage. Current-voltage (I-V) measurements on both AlN and ZnO/AlN/Si(100) structure exhibited asymmetric nonlinear behavior with a large zero current region. Further analysis of I-V and current-force data suggests Fowler–Nordheim like behavior under Hertzian contact as a dominant mechanism for electron transport.
ACCESSION #
34360667

 

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