TITLE

Carrier dynamics and erbium sensitization in silicon-rich nitride nanocrystals

AUTHOR(S)
Li, R.; Schneck, J. R.; Warga, J.; Ziegler, L. D.; Dal Negro, L.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p091119
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ultrafast two-color pump-probe measurements, time-resolved photoluminescence (TRPL), and photoluminescence excitation measurements were performed on Si-rich nitride (SRN) and Er doped SRN (Er:SRN) nanocrystals samples. Transient absorption data were compared with picosecond TRPL and excited state absorption cross (ESA) sections σ were measured at different wavelengths. Our data show that σ in Er:SRN, which is approximately 10-19 cm2 at 1.54 μm, does not scale with the ∼λ2 behavior predicted by simple free carrier absorption models. Finally, our data demonstrate that in Er:SRN efficient energy transfer to Er ions occurs on the nanosecond time scale with reduced ESA compared to Er-doped oxide-based systems.
ACCESSION #
34360663

 

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