Charge injection at carbon nanotube-SiO2 interface

Hock Guan Ong; Jun Wei Cheah; Lang Chen; Hosea TangTang; Yanping Xu; Bing Li; Hua Zhang; Lain-Jong Li; Junling Wang
September 2008
Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p093509
Academic Journal
Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube-SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface.


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