TITLE

Improved performance of Schottky diodes on pendeoepitaxial gallium nitride

AUTHOR(S)
Zheleva, T.; Derenge, M.; Ewing, D.; Shah, P.; Jones, K.; Lee, U.; Robins, L.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p091909
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We designed experiments to investigate the role of dislocation density on the performance of Schottky diodes fabricated on a GaN material grown conventionally and by pendeo-epitaxy. Devices of varying geometries were fabricated on low defect density GaN regions grown selectively via pendeo-epitaxy. In addition, corresponding devices were fabricated on the conventional GaN material with a high density of dislocations. Schottky diodes fabricated on pendeo-material showed nearly two orders of magnitude lower leakage current and displayed improved ideality factor, while diodes built on a conventional material displayed nonideal characteristics.
ACCESSION #
34360649

 

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