TITLE

GaNAsSb/GaAs waveguide photodetector with response up to 1.6 μm grown by molecular beam epitaxy

AUTHOR(S)
Loke, W. K.; Yoon, S. F.; Xu, Z.; Tan, K. H.; Ng, T. K.; Sim, Y. K.; Wicaksono, S.; Saadsaoud, N.; Decoster, D.; Chazelas, J.
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p081102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a GaNAsSb/GaAs p-i-n waveguide photodetector operating in the 1.0–1.6 μm wavelength range with enhanced photoresponsivity compared to a top-illuminated photodetector fabricated using the same material system. The device consists of a strained GaNAsSb layer, with N and Sb contents of 3.5% and 18%, respectively, sandwiched between GaAs:Si (n-type) and GaAs:C (p-type) layers. X-ray reciprocal space map of the GaNAsSb layer before device fabrication showed that the film relaxation is ∼1%. At 1.55 μm, photoresponsivities of 0.25 and 0.29 A/W for devices with 6.5 and 10 μm ridge width, respectively, was demonstrated.
ACCESSION #
34198869

 

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