GaNAsSb/GaAs waveguide photodetector with response up to 1.6 μm grown by molecular beam epitaxy

Loke, W. K.; Yoon, S. F.; Xu, Z.; Tan, K. H.; Ng, T. K.; Sim, Y. K.; Wicaksono, S.; Saadsaoud, N.; Decoster, D.; Chazelas, J.
August 2008
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p081102
Academic Journal
We present a GaNAsSb/GaAs p-i-n waveguide photodetector operating in the 1.0–1.6 μm wavelength range with enhanced photoresponsivity compared to a top-illuminated photodetector fabricated using the same material system. The device consists of a strained GaNAsSb layer, with N and Sb contents of 3.5% and 18%, respectively, sandwiched between GaAs:Si (n-type) and GaAs:C (p-type) layers. X-ray reciprocal space map of the GaNAsSb layer before device fabrication showed that the film relaxation is ∼1%. At 1.55 μm, photoresponsivities of 0.25 and 0.29 A/W for devices with 6.5 and 10 μm ridge width, respectively, was demonstrated.


Related Articles

  • Anomalous lattice deformation in GaN/SiC(0001) measured by high-speed in situ synchrotron X-ray diffraction. Takuo Sasaki; Fumitaro Ishikawa; Masamitu Takahasi // Applied Physics Letters;1/1/2016, Vol. 108 Issue 1, p1 

    We report an anomalous lattice deformation of GaN layers grown on SiC(0001) by molecular beam epitaxy. The evolution of the lattice parameters during the growth of the GaN layers was measured by in situ synchrotron X-ray diffraction. The lattice parameters in the directions parallel and normal...

  • Lattice dilation by free electrons in heavily doped GaAs:Si. Leszczynski, M.; Bak-Misiuk, J. // Applied Physics Letters;7/24/1995, Vol. 67 Issue 4, p539 

    Examines lattice dilation by free electrons in doped gallium arsenide (GaAs) layers grown on silicon substrates through molecular beam epitaxy. Increase in lattice constants of GaAs layers; Effects of silicon atoms on lattice constants; Nonexistence of concentration defects causing lattice...

  • In situ measurement of AlAs and GaAs refractive index dispersion at epitaxial growth temperature. Bardinal, V.; Legros, R. // Applied Physics Letters;7/10/1995, Vol. 67 Issue 2, p244 

    Investigates the in situ molecular beam epitaxy control of III-V optoelectronic device growth. Application of the dynamic optical reflectometry with tunable excitation wavelength; Values of the aluminum-arsenic and gallium-arsenic refractive indices; Presentation of index dispersion between 760...

  • A new double-heterostructure optoelectronic switching device using molecular-beam epitaxy. Taylor, G. W.; Simmons, J. G.; Cho, A. Y.; Mand, R. S. // Journal of Applied Physics;1/15/1986, Vol. 59 Issue 2, p596 

    Demonstrates two-terminal switching action in an optoelectronic device structure called a double heterostructure optoelectronic switch (DOES) using molecular beam epitaxy. Description of the device; Characteristics of the device; Basis for the potential of the DOES to provide optical gain.

  • Wide bandwidth (100) GaAs/fluorides quarter-wavelength Bragg reflectors grown by molecular beam epitaxy. Shi, Z.; Zogg, H.; Mu¨ller, P.; Jung, I. D.; Keller, U. // Applied Physics Letters;12/2/1996, Vol. 69 Issue 23, p3474 

    Broadband quarter-wavelength Bragg reflectors that consist of periodic stacks of fluorides (CaF2–BaF2–CaF2) and GaAs, centered at 1.4 μm, were grown by molecular beam epitaxy. Despite a total fluoride thickness as high as 720 nm, crack-free surface morphology was obtained. In...

  • Heterostructure optoelectronic switch with lightcontrollable S-shaped negative differential resistance. Guo, Der-Feng // Applied Physics Letters;3/2/1998, Vol. 72 Issue 9, p1010 

    A heterostructure optoelectronic switch, grown by molecular beam epitaxy, has been fabricated. Owing to the carrier confinement and avalanche multiplication in the transport mechanism, S-shaped negative-differential-resistance performances are observed in the current-voltage (I-V)...

  • Effects of small amounts of Al in GaN grown on sapphire (0001) by molecular beam epitaxy. Zsebo¨k, O.; Thordson, J. V.; Zhao, Q. X.; Andersson, T. G. // Journal of Applied Physics;2/1/2001, Vol. 89 Issue 3, p1954 

    A series of 0.7/µm thick GaN layers have been grown by solid-source rf-plasma assisted molecular beam epitaxy on sapphire (0001) substrates with the addition of 0.10%-3.30% Al. The A1 concentration was determined by secondary ion-mass spectrometry and Auger-electron spectroscopy, while the...

  • Optically pumped ultraviolet microdisk laser on a silicon substrate. Liu, X.; Fang, W.; Huang, Y.; Wu, X. H.; Ho, S. T.; Cao, H.; Chang, R. P. H. // Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2488 

    We have fabricated ultraviolet microdisk lasers on silicon substrates. A thin layer of zinc oxide is grown on top of the silica microdisks and serves as the gain medium. Under optical pumping, lasing occurs in the whispering gallery modes of the hybrid microdisks at room temperature. Above the...

  • The microwave and radiofrequency spectrum of H2S·Ar. Viswanathan, R.; Dyke, T. R. // Journal of Chemical Physics;2/15/1985, Vol. 82 Issue 4, p1674 

    Molecular beam electric resonance spectroscopy has been used to determine the radiofrequency and microwave spectrum of H2S·Ar, HDS·Ar, and D2S·Ar. The electric dipole moment and nuclear hyperfine interactions reflect an angular structure in which the H2S C2 axis is nearly perpendicular...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics