Band-edge emission enhancement by longitudinal stress field in GaN

Cai, Duanjun; Kang, Junyong; Gibart, Pierre; Beaumont, Bernard; Sekiguchi, Takachi; Ito, Shun
August 2008
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p081908
Academic Journal
Bright ultraviolet luminescence in the wing region of epitaxial-lateral-overgrowth GaN was studied by cathodoluminescence. Analysis of dislocation bending and movement by transmission electron microscopy demonstrates the emergence of another longitudinal stress field, which effectively enhances the band-edge light emission. Ab initio calculations of interband transition probability provide a model showing that introduction of appropriate additional stress component in the longitudinal direction of GaN will improve the efficiency of band-edge emission.


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