Suppression of the intermode plasmon scattering due to total internal reflection of oblique plasmons in a multichannel high-electron-mobility transistor

Popov, V. V.
August 2008
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083501
Academic Journal
Terahertz radiation impinging on multichannel high-electron-mobility transistors (HEMTs) with comparable lateral and transverse gated-channel dimensions excites oblique plasmons modes that experience the total internal reflection from the gate edges. This reflection prevents leakage of the gated plasmon energy into the ungated plasmons modes of ungated device regions. These results can explain significant shrinking of the gated plasmon resonance linewidth in the multichannel HEMT.


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