TITLE

Partially coherent extreme ultraviolet interference lithography for 16 nm patterning research

AUTHOR(S)
Goldstein, M.; Wüest, A.; Barnhart, D.
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Conditions are reported under which a partially coherent plasma source of 13.5 nm wavelength radiation is found to be suitable for interference lithography. The predicted resolution exceeds the capability of present imaging systems and is comparable to synchrotron-based approaches. Methods borrowed from ray tracing are utilized for a partially coherent interference analysis, and a rigorous coupled wave theory is applied to optimize grating efficiency. The results suggest that a compact patterning tool with a resolution of 16 nm is possible by a careful selection of the design parameters.
ACCESSION #
34198830

 

Related Articles

  • Lithography beamline design and exposure uniformity controlling and measuring. Qian, Shinan; Jiang, Dikui; Liu, Zewen; Chen, Qianhong; Kan, Ya; Liu, Wanpo // Review of Scientific Instruments;Jul1989, Vol. 60 Issue 7, p2148 

    The lithography beamline design of Hefei National Synchrotron Radiation Laboratory is presented. A scanning mirror is used to cut offshort wavelength radiation and to expand the vertical exposure dimension to 50 mm. A thin beryllium window is installed before the scanning mirror to prevent the...

  • Review of Japanese compact electron storage rings and their applications (invited). Tomimasu, T. // Review of Scientific Instruments;Jul1989, Vol. 60 Issue 7, p1622 

    Key technologies needed to realize compact synchrotron radiation (SR) facilities used for industrial arid medical uses are discussed, and the recent status of nine Japanese small rings used in SR lithography is reported. The majority of their applications is focused on SR lithography: that is,...

  • Lithography makes mini gears affordable.  // Professional Engineering;8/14/2002, Vol. 15 Issue 15, p52 

    Reports on the manufacturing of extra small precision gear unit. Benefits of lithographic process used to generate very accurate minuscule three-dimensional structures; Adoption of second galvanoforming process that is suitable for high-volume production; Use of high-energy, short-wavelength...

  • Emittance measurements at the ESRF. Tarazona, E.; Elleaume, P. // Review of Scientific Instruments;Feb1995, Vol. 66 Issue 2, p1974 

    Describes a method of electron beam imaging being used routinely at the European Synchrotron Radiation Facility in Grenoble, France. Description of the measurement; Use of the x-ray beam coming from an undulator; Data processing; Main limitations of the instrument for emittances in the...

  • Si-rich a-SiNx:H Thin Film a Prospective Material for EUV Lithography: An Optical Response near Si L2,3-edge. Singh, Sarab Preet; Modi, Mohammed H.; Srivastava, P. // AIP Conference Proceedings;7/16/2011, Vol. 1349 Issue 1, p667 

    Using Indus-I synchrotron radiation source, angle dependent soft x-ray reflectivity measurements in the wavelength region (5-15 nm) near Si L2,3 edge have been performed on Si-rich a-SiNx:H (SRSN) thin film. The study shows that experimentally obtained δ values of SRSN film lie in between...

  • Waving the Euro flag. Saettele, Jamie // Futures: News, Analysis & Strategies for Futures, Options & Deri;Apr2010, Vol. 39 Issue 4, p24 

    The article presents a Elliott Wave analysis which shows that the Euro/U.S. dollars decline from its November 2009 high is in three waves.

  • Optimization of a synchrotron based x-ray lithographic system. Bernieri, E.; Balerna, A. // Review of Scientific Instruments;Jul1989, Vol. 60 Issue 7, p2137 

    Exposure time and mask contrast are two of the main parameters affecting the x-ray lithographic (XRL) process. In a synchrotron-based XRL system (SXRL), both parameters strongly depend on the source spectrum and beamline characteristics. Calculations have been done in order to optimize a SXRL...

  • Fine-alignment exposure system for synchrotron x-ray lithography (invited). Itoh, Junji; Kanayama, Toshihiko; Atoda, Nobufumi; Hoh, Koichiro // Review of Scientific Instruments;Jul1989, Vol. 60 Issue 7, p1638 

    We have constructed an exposure system based on a newly developed mask-to-wafer alignment technique for use in a 1/4-μm lithography with synchrotron radiation (SR) x rays. This system consists of optics for fine alignment along the horizontal axis, vertical mask and wafer stages, a position...

  • Investigations of the spatial distribution of the energy characteristics of plasma radiators for a system of assurance of uniformity of measurements in nanolithography. R. Minaev // Measurement Techniques;May2007, Vol. 50 Issue 5, p519 

    Abstract  A comparator that incorporates an imaging system and a position-sensitive detector is developed. The comparator supports the formation of spectro-zonal images with calibration in units of radiance and radiant intensity through the use of synchrotron radiation. A comparator is...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics