High-density one-dimensional well-aligned germanium quantum dots on a nanoridge array

Chen, Yan-Ru; Kuan, Chieh-Hsiung; Suen, Yuen-Wuu; Peng, Yu-Hwa; Chen, Peng-Shiu; Chao, Cha-Hsin; Liang, Eih-Zhe; Lin, Ching-Fuh; Lo, Hung-Chun
August 2008
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083101
Academic Journal
The selective growth of high-density one-dimensional well-aligned Ge quantum dots (QDs) on the top of nanoridges patterned on Si substrate is reported. The period of ridge array is 150 nm, the width of each ridge is 80 nm, and the depth of the trench is 20 nm. The areal density of QDs is about 5.4×109 cm-2. Simulations of the chemical potential show that a proper distribution of the surface curvature may give rise to a suitable chemical potential minimum helping positioning the QDs. These ridges can also be used to control the shape and the uniformity of QDs.


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