TITLE

High-density one-dimensional well-aligned germanium quantum dots on a nanoridge array

AUTHOR(S)
Chen, Yan-Ru; Kuan, Chieh-Hsiung; Suen, Yuen-Wuu; Peng, Yu-Hwa; Chen, Peng-Shiu; Chao, Cha-Hsin; Liang, Eih-Zhe; Lin, Ching-Fuh; Lo, Hung-Chun
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The selective growth of high-density one-dimensional well-aligned Ge quantum dots (QDs) on the top of nanoridges patterned on Si substrate is reported. The period of ridge array is 150 nm, the width of each ridge is 80 nm, and the depth of the trench is 20 nm. The areal density of QDs is about 5.4×109 cm-2. Simulations of the chemical potential show that a proper distribution of the surface curvature may give rise to a suitable chemical potential minimum helping positioning the QDs. These ridges can also be used to control the shape and the uniformity of QDs.
ACCESSION #
34198821

 

Related Articles

  • SiGe quantum dot molecules grown on patterned Si (001) substrates. Yang, Hongbin; Zhang, Xiang-jiu; Jiang, Zuiming; Yang, Xinju; Fan, Yongliang // Journal of Applied Physics;Aug2008, Vol. 104 Issue 4, p044303 

    SiGe quantum dot molecules (QDMs) grown on patterned Si (001) substrates by molecular beam epitaxy were studied. Experimental results showed that the density, the dimension, and the dimension distribution of the SiGe QDMs grown in the windows were dependent on the window size. When the thickness...

  • Thermodynamic theory of shape evolution induced by Si capping in Ge quantum dot self-assembly. Li, X. L.; Yang, G. W. // Journal of Applied Physics;Jan2009, Vol. 105 Issue 1, p013510 

    A quantitative thermodynamic theory has been established to investigate the shape evolution mechanisms induced by Si capping in Ge quantum dot self-assembly. It was found that the decrease in Ge concentration of the quantum dot induced by Si absorption breaks the original balance of composition...

  • Individual GaAs quantum emitters grown on Ge substrates. Cavigli, L.; Abbarchi, M.; Bietti, S.; Somaschini, C.; Sanguinetti, S.; Koguchi, N.; Vinattieri, A.; Gurioli, M. // Applied Physics Letters;3/7/2011, Vol. 98 Issue 10, p103104 

    We report on the nucleation of low density and defect-free GaAs quantum dots (QDs) on Ge substrates. The growth of III-V nanostructures was realized via droplet epitaxy technique. A detailed micro- and macro-photoluminescence analysis shows that the optical quality of the GaAs QDs is almost...

  • The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures. Lin, Xi; Hu, Jingshi; Lai, Andrew P.; Zhang, Zhenning; MacLean, Kenneth; Dillard, Colin; Xie, Ya-Hong; Kastner, Marc A. // Journal of Applied Physics;Jul2011, Vol. 110 Issue 2, p023712 

    Quantum dots in Si/SiGe heterostructures are expected to have relatively long electron spin decoherence times, because of the low density of nuclear spins and the weak coupling between nuclear and electron spins. We provide experimental evidence suggesting that electron motion in a conductive...

  • Strain and Intermixing in Single Ge/Si Quantum Dots Observed by Tip-enhanced Raman Spectroscopy. Toizumi, T.; Yuasa, Y.; Ogawa, Y.; Katayama, K.; Minami, F.; Baranov, A. V. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p553 

    Tip-enhanced Raman spectra of as-grown self-assembled Ge/Si quantum dots have been observed with nano-scale spatial resolution. It is found that the Ge-Ge and Si-Ge modes in the Raman spectra were significantly enhanced only when the tip was on the Ge/Si dots. The Ge content in a single dot was...

  • Hopping Photoconduction and Its Long-Time Kinetics in a Heterosystem with Ge Quantum Dots in Si. Stepina, N.P.; Yakimov, A.I.; Nenashev, A.V.; Dvurechenski&icaron;, A.V.; Nikiforov, A.I. // JETP Letters;11/10/2003, Vol. 78 Issue 9, p587 

    The effect of interband-transition-inducing illumination on the hole hopping conduction along a two-dimensional array of Ge quantum dots in Si was studied. It is found that the photoconductance has either positive or negative sign depending on the initial filling of quantum dots with holes. In...

  • Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors. Chun-Jung Tang; Tahui Wang; Chih-Sheng Chang // Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p142103 

    Quantum confinement effects on hole mobility in silicon and germanium double gate p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied by using a Monte Carlo method. Uniaxial stress and channel/substrate orientation effects are considered. Our result shows that the...

  • Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy. Kapteyn, C. M. A.; Kapteyn, C.M.A.; Lion, M.; Heitz, R.; Bimberg, D.; Miesner, C.; Asperger, T.; Brunner, K.; Abstreiter, G. // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    Hole emission from self-organized Ge quantum dots with a diameter of ∼70 nm in a Si matrix is investigated by time-resolved capacitance spectroscopy [deep level transient spectroscopy (DLTS)]. A complex DLTS signal is observed and explained in terms of thermally activated emission from...

  • Electronic structure and compositional interdiffusion in self-assembled Ge quantum dots on Si(001). Seok, J. H.; Kim, J. Y. // Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3124 

    The radiative recombination peaks over a broad energy range of 0.75-0.9 eV have been observed by photoluminescence spectroscopy in self-assembled Ge/Si quantum dot structures. In order to clarify the broadness of the peak distribution, we have investigated the electronic structure of an...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics