Visible photoemission from InN

Glesener, J. W.; Estrera, J. P.
August 2008
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p082104
Academic Journal
At 5.8 eV, InN has one of the highest electron affinities of any semiconductor. Upon applying cesium and oxygen to a previously hydrogen cleaned InN surface, visible photoemission was observed. The InN spectral response confirms the standard model of photoemission yield with an inclusion of a tunneling factor for the electron escape probability. The existence of photoemission beyond 950 nm supports the case for a lower bandgap in this material.


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