TITLE

Visible photoemission from InN

AUTHOR(S)
Glesener, J. W.; Estrera, J. P.
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p082104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
At 5.8 eV, InN has one of the highest electron affinities of any semiconductor. Upon applying cesium and oxygen to a previously hydrogen cleaned InN surface, visible photoemission was observed. The InN spectral response confirms the standard model of photoemission yield with an inclusion of a tunneling factor for the electron escape probability. The existence of photoemission beyond 950 nm supports the case for a lower bandgap in this material.
ACCESSION #
34198812

 

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