TITLE

GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions

AUTHOR(S)
Suchalkin, Sergey; Jung, Seungyong; Kipshidze, Gela; Shterengas, Leon; Hosoda, Takashi; Westerfeld, David; Snyder, Donald; Belenky, Gregory
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p081107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Mid-IR (λ≈3–3.5 μm) light emitting diodes with quinternary AlInGaAsSb barriers and InGaAsSb strained quantum wells grown on GaSb substrates have been demonstrated. The devices produced a quasi-cw emission power of 0.7 mW at room temperature and 2.5 mW at T=80 K.
ACCESSION #
34198811

 

Related Articles

  • Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition. Ramaiah, K.S; Su, Y.K.; Chang, S.J.; Kerr, B.; Liu, H.P.; Chen, I.G. // Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3307 

    The structural, surface morphology, and the temperature dependence photoluminescence of InGaN(3 nm)/GaN(7 nm) 5 period multi-quantum-well blue-light-emitting diode (LED) structures grown by metal organic chemical vapor deposition (MOCVD) have been studied. Quantum dot-like structures and strain...

  • Optical and electrical step-recovery study of minority-carrier transport in an InGaN/GaN quantum-well light-emitting diode grown on sapphire. Kaplar, R. J.; Kurtz, S. R.; Koleske, D. D. // Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5436 

    Forward-to-reverse bias step-recovery experiments were performed on an InGaN/GaN single-quantum-well light-emitting diode grown on sapphire. With the quantum well sampling the minority-carrier hole density at a single position, the optical emission displayed a two-stage decay. Using a solution...

  • Spatial distribution of crown shaped light emission from a periodic inverted polygonal deflector embedded in an InGaN/GaN light emitting diode. Kim, Hyung Gu; Cuong, Tran Viet; Jeong, Hyun; Woo, Seung Hee; Cha, Ok Hwan; Suh, Eun-Kyung; Hong, Chang-Hee; Cho, Hyung Koun; Kong, Bo Hyun; Jeong, Mun Seok // Applied Physics Letters;2/11/2008, Vol. 92 Issue 6, p061118 

    We investigated spatial light emission from a periodic inverted polygonal deflector, which included six {10-1-1} facets and six {11-2-2} facets embedded in an InGaN/GaN light emitting diode by using confocal scanning electroluminescence microscopy. We found a noticeable crown shape with the...

  • OLED Displays Bring Much-Needed Light To The End Of The Economic Tunnel. Allan, Roger // Electronic Design;4/9/2009, Vol. 57 Issue 7, p27 

    The article focuses on the importance of organic light-emitting diode (OLED) technology for the needed light of the economic tunnel. It mentions that OLED continues to support the industry's current economic struggles, carving out lucrative applications in various display and lighting...

  • Dual role of LiF as a hole-injection buffer in organic light-emitting diodes. Zhao, J. M.; Zhang, S. T.; Wang, X. J.; Zhan, Y. Q.; Wang, X. Z.; Zhong, G. Y.; Wang, Z. J.; Ding, X. M.; Huang, W.; Hou, X. Y. // Applied Physics Letters;4/12/2004, Vol. 84 Issue 15, p2913 

    It is demonstrated experimentally that the effect of a LiF buffer layer inserted at the ITO\N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′ biphenyl 4,4′-dimaine (NPB) interface on the hole injection is greatly dependent on the initial barrier height (IBH) existing at the...

  • High-power deep ultraviolet light-emitting diodes based on a micro-pixel design. Adivarahan, V.; Wu, S.; Sun, W. H.; Mandavilli, V.; Shatalov, M. S.; Simin, G.; Yang, J. W.; Maruska, H. P.; Khan, M. Asif // Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1838 

    Using a micro-pixel design, we report the demonstration of high-power deep UV AlGaN-based light-emitting diodes (LEDs) with peak emission wavelength at 280 nm. The design comes in response to lateral current crowding problems, which severely limit the maximum possible active area and the overall...

  • A study of transparent contact to vertical GaN-based light-emitting diodes. Kim, D. W.; Lee, H. Y.; Yeom, G. Y.; Sung, Y. J. // Journal of Applied Physics;9/1/2005, Vol. 98 Issue 5, p053102 

    In this study, transparent indium tin oxide (ITO) deposited by sputtering was applied to laser lift-off (LLO) GaN-based vertical light-emitting diodes (VLEDs) and the electrical and optical properties of ITO films were measured as a function of annealing conditions. The measured minimum...

  • Highly efficient white organic electroluminescent devices based on tandem architecture. Chan-Ching Chang; Jenn-Fang Chen; Shiao-Wen Hwang; Chen, Chin H. // Applied Physics Letters;12/19/2005, Vol. 87 Issue 25, p253501 

    Two types of tandem organic light-emitting diodes (OLEDs) with white-light emission have been developed by using Mg:Alq3/WO3 as the interconnecting layer. While the Commission Internationale d’Eclairage (CIE) coordinates of the tandem device with individual blue- and yellow-emitting OLEDs...

  • Improved electroluminescent efficiency of organic light emitting devices by co-doping N, N′-Dimethyl-quinacridone and Coumarin6 in tris-(8-hydroxyquinoline) aluminum. Su, W. M.; Li, W. L.; Hong, Z. R.; Li, M. T.; Yu, T. Z.; Chu, B.; Li, B.; Zhang, Z. Q.; Hu, Z. Z. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p213501 

    Electroluminescent (EL) efficiency of organic light emitting devices was improved by co-doping N, N′-dimethyl-quinacridone (DMQA) and Coumarin6 (C6) in tris-(8-hydroxyquinoline) aluminum (Alq3). At 20 mA/cm2, superior EL efficiency of 9.33 cd/A was obtained from 1.6% co-doped (0.8% DMQA...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics