TITLE

Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes

AUTHOR(S)
Wang, Q.; Wang, T.; Bai, J.; Cullis, A. G.; Parbrook, P. J.; Ranalli, F.
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p081915
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electron-luminescence (EL) and high-resolution transmission electron microscopy (TEM) measurements have been carried out on the InGaN quantum dot (QD) based light emitting diodes (LEDs) annealed at different temperatures for p-type GaN activation. The annealing temperatures are chosen based on the growth temperature for our InGaN QDs as a reference point. A significant improvement with a factor of up to ∼3.5 in EL intensity has been achieved when the annealing temperature is increased from 720 to 800 °C. However, the EL intensity dramatically decreases if the annealing temperature further increases to 830 °C. In addition, a clear blueshift in EL emission energy has been observed as a result of increasing annealing temperature. In combination with our TEM study, the change in optical properties of the QD based LEDs due to the thermal annealing can be attributed to the shrinkage of the QDs and then eventual mergence into the wetting layer if the annealing temperature is further increased. The data based on detailed driving-current dependent EL measurements also support the conclusion.
ACCESSION #
34198801

 

Related Articles

  • Deep UV light emitting diodes grown by gas source molecular beam epitaxy. Nikishin, Sergey; Borisov, Boris; Kuryatkov, Vladimir; Holtz, Mark; Garrett, Gregory A.; Sarney, Wendy L.; Sampath, Anand V.; Hongen Shen; Wraback, Michael; Usikov, Alexander; Dmitriev, Vladimir // Journal of Materials Science: Materials in Electronics;Aug2008, Vol. 19 Issue 8/9, p764 

    We report the structural, electrical, and optical properties of deep UV light emitting diodes (LEDs) grown by gas source molecular beam epitaxy with ammonia on sapphire and AlN/sapphire template substrates. AlN/sapphire substrates were grown by stress controlled hydride vapor phase epitaxy...

  • Midinfrared electroluminescence from PbTe/CdTe quantum dot light-emitting diodes. Hochreiner, A.; Schwarzl, T.; Eibelhuber, M.; Heiss, W.; Springholz, G.; Kolkovsky, V.; Karczewski, G.; Wojtowicz, T. // Applied Physics Letters;1/10/2011, Vol. 98 Issue 2, p021106 

    Midinfrared electroluminescence of epitaxial PbTe quantum dots in CdTe with emission in the 2-3 μm wavelength range is demonstrated up to room temperature. The light-emitting diode structures were grown by molecular beam epitaxy with the active PbTe quantum dots embedded in the intrinsic zone...

  • Stark shift in electroluminescence of individual InAs quantum dots. Itskevich, I. E.; Itskevich, I.E.; Rybchenko, S. I.; Rybchenko, S.I.; Tartakovskii, I. I.; Tartakovskii, I.I.; Stoddart, S. T.; Stoddart, S.T.; Levin, A.; Main, P. C.; Main, P.C.; Eaves, L.; Henini, M.; Parnell, S. // Applied Physics Letters;6/26/2000, Vol. 76 Issue 26 

    We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assembled quantum dots is embedded, with an active area of submicron size. In the electroluminescence spectra of these devices, we observed isolated narrow peaks due to emission from individual dots....

  • Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots. Chang, W.-H.; Chou, A.T.; Chen, W.Y.; Chang, H.S.; Hsu, T.M.; Pei, Z.; Chen, P.S.; Lee, S.W.; Lai, L.S.; Lu, S.C.; Tsai, M.-J. // Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2958 

    Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes is reported. The devices were fabricated in a mesa-type structure, with a silicon oxide layer on the top for surface/sidewall passivation. Different passivation processes were employed. We...

  • Electroluminescence properties of the Gd3+ ultraviolet luminescent centers in SiO2 gate oxide layers. Sun, J. M.; Prucnal, S.; Skorupa, W.; Dekorsy, T.; Müchlich, A.; Helm, M.; Rebohle, L.; Gebel, T. // Journal of Applied Physics;5/15/2006, Vol. 99 Issue 10, p103102 

    Electroluminescence (EL) properties in the ultraviolet (UV) range were studied on Gd-implanted indium tin oxide/SiO2:Gd/Si metal-oxide-semiconductor light emitting devices. The efficient UV line at 316 nm from Gd3+ centers shows a maximum power density of 2 mW/cm2 and a quantum efficiency above...

  • Reduced nonthermal rollover of wide-well GaInN light-emitting diodes. Maier, Markus; Köhler, Klaus; Kunzer, Michael; Pletschen, Wilfried; Wagner, Joachim // Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG 

    Nonthermal rollover (or efficiency droop) of the electroluminescence (EL) efficiency has been investigated for near-UV-emitting (AlGaIn)N single-well light-emitting diodes (LED) with varying GaInN well widths grown on substrates with different dislocation densities (DDs). For each DD the well...

  • Optical studies of electric fields in poly (2-methoxy-5-ethyl (2'-hexyloxy) para-phenylene... Giebeler, C.; Whitelegg, S.A. // Applied Physics Letters;6/14/1999, Vol. 74 Issue 24, p3714 

    Details optical studies of poly(2-methoxy-5-ethyl(2'-hexyloxy) para-phenylene vinylene) light-emitting diodes. Counter field; Bulk carrier traps; Increase of the turn-on voltage as organic light-emitting diodes degrade; Discovery of electroluminescence from poly(para-phenylene vinylene).

  • Near-ultraviolet electroluminescent performance of polysilane-based light-emitting diodes with a... Hoshino, Satoshi; Ebata, Keisuke // Journal of Applied Physics;2/15/2000, Vol. 87 Issue 4, p1968 

    Presents information on a study which evaluated the near-ultraviolet electroluminescence performance of double-layer light-emitting diodes (LED). Charge carrier behavior of the LED; Optical properties of LED materials and electroluminescence spectra of the diodes; Experimental details; Results...

  • Mechanism of enhanced quantum efficiency in light-emitting diode based on a poly(p-phenylenevinylene) derivative. Jae Won Jang; Dong Keun Oh // Journal of Applied Physics;3/15/2000, Vol. 87 Issue 6, p3183 

    Deals with a study that investigated the transient electroluminescence characteristics of poly(p-phenylenevinylene) (PPV) to understand the carrier mobilities in the polymers. Opinion on PPV as a light-emitting organic polymer; Thickness of the indium-tin-oxide electrode used for hole injecting...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics