Visualization of weak confinement potentials by near-field optical imaging spectroscopy of exciton and biexciton in a single quantum dot

Sugimoto, Y.; Saiki, T.; Nomura, S.
August 2008
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083116
Academic Journal
Imaging spectroscopy of a single GaAs interface fluctuation quantum dot (IFQD) was performed using a near-field scanning optical microscope (NSOM) with a spatial resolution of 40 nm. A difference in the emission profiles of an exciton and a biexciton was found for several IFQDs. By comparing with a numerical simulation based on the finite-difference time-domain method, this difference was attributed to the existence of a shallow potential dip in the IFQD. The NSOM wavefunction mapping for excitons and biexcitons as quasiparticles with different masses is a tool for investigating weak confinement potentials to detect local strain and disorder.


Related Articles

  • Strain-Renormalized Energy Spectra of Electrons and Holes in InAs Quantum Dots in the InAs/GaAs Heterosystem. Dan'kiv, O. O.; Peleshchak, R. M. // Technical Physics Letters;Aug2005, Vol. 31 Issue 8, p691 

    Analytical expressions describing the energy spectrum of electrons and holes are obtained for a quantum dot (QD) occurring in a self-consistent strain field created by an array of coherently stressed QDs. A method of taking into account the lattice mismatch at the QD–matrix interface is...

  • Self-organized strain engineering on GaAs (311)B: Template formation for quantum dot nucleation control. Gong, Q.; Nötzel, R.; Hamhuis, G. J.; Eijkemans, T. J.; Wolter, J. H. // Applied Physics Letters;10/21/2002, Vol. 81 Issue 17, p3254 

    A matrix of closely packed cells develops during molecular-beam epitaxy of In[sub 0.35]Ga[sub 0.65]As on GaAs (311)B, due to strain-driven growth instability. The established lateral strain distribution generates a unique template that controls the nucleation and growth of InAs quantum dots...

  • Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire. Tatebayashi, J.; Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. // Applied Physics Letters;9/8/2014, Vol. 105 Issue 10, p1 

    We demonstrate a highly uniform, dense stack of In0.22Ga0.78As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs...

  • Effect of strain on the band structure of GaAs and In0.2Ga0.8As. Hwang, J.; Shih, C. K.; Pianetta, P.; Kubiak, G. D.; Stulen, R. H.; Dawson, L. R.; Pao, Y.-C.; Harris, J. S. // Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p308 

    The valence-band structures of 50-Å-thick layers of GaAs(001) in tension and In0.2Ga0.8As(001) in compression have been determined using angle-resolved photoemission spectroscopy. Our studies show that the Δ3+Δ4 bands and the Δ1 band respond differently to the strain...

  • Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region. Kryzhanovskaya, N.; Zhukov, A.; Nadtochy, A.; Maximov, M.; Moiseev, E.; Kulagina, M.; Savelev, A.; Arakcheeva, E.; Lipovskii, A.; Zubov, F.; Kapsalis, A.; Mesaritakis, C.; Syvridis, D.; Mintairov, A.; Livshits, D. // Semiconductors;Oct2013, Vol. 47 Issue 10, p1387 

    Microring cavities (diameter D = 2.7-7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity...

  • Optical properties of a tip-induced quantum dot. Kemerink, M.; Sauthoff, K.; Koenraad, P.M.; Gerritsen, J.W.; van Kempen, H.; Fomin, V.M.; Wolter, J.H.; Devreese, J.T. // Applied Physics A: Materials Science & Processing;2001, Vol. 72 Issue 8, pS239 

    Abstract. We have performed optical spectroscopy measurements on a STM-tip-induced quantum dot in a GaAs layer. The dominant confinement in the (hole) quantum dot is found to be in the direction parallel to the tip axis. Electron confinement is achieved by a sub-surface AlGaAs barrier....

  • 450 meV hole localization in GaSb/GaAs quantum dots. Geller, M.; Kapteyn, C.; Müller-Kirsch, L.; Heitz, R.; Bimberg, D. // Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2706 

    The electronic properties of self-organized GaSb quantum dots (QDs) embedded in GaAs n[SUP+] p diodes were investigated by capacitance-voltage and deep level transient spectroscopy. The localization energy of the hole ground state is 450 meV. State filling lowers the activation energy to 150 meV...

  • Formation of self-assembled InGaAs quantum dot arrays aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs. Akiyama, Y.; Sakaki, H. // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p183108 

    Dense and highly ordered arrays of self-assembled InGaAs quantum dots are formed by molecular beam epitaxy along multiatomic steps on vicinal (111)B GaAs. This unique structure has been synthesized by depositing a nominally 3-nm-thick In0.3Ga0.7As layer onto a periodically corrugated surface...

  • The influence of compressive stress on shallow-donor impurity states in symmetric GaAs-Ga1-xAlxAs double quantum dots. Liu, Jian-Jun; Shen, Man; Wang, Shao-Wei // Journal of Applied Physics;4/1/2007, Vol. 101 Issue 7, p073703 

    The effects of compressive stress on the binding energy of shallow-donor impurity states in symmetrical GaAs-Ga1-xAlxAs double quantum dots are calculated variationally using a parameterized wave function within the effective-mass approximation. Results are obtained for different dot and barrier...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics