TITLE

Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

AUTHOR(S)
Won Jun Park; Hyun Soo Shin; Byung Du Ahn; Gun Hee Kim; Seung Min Lee; Kyung Ho Kim; Hyun Jae Kim
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083508
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [Ga/Zn (%)]. A field-effect mobility of 1.63 cm2/V s and a drain current on/off ratio of 4.17×106 were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.
ACCESSION #
34198794

 

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