Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

Won Jun Park; Hyun Soo Shin; Byung Du Ahn; Gun Hee Kim; Seung Min Lee; Kyung Ho Kim; Hyun Jae Kim
August 2008
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083508
Academic Journal
Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [Ga/Zn (%)]. A field-effect mobility of 1.63 cm2/V s and a drain current on/off ratio of 4.17×106 were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.


Related Articles

  • Zinc oxide, a multifunctional material: from material to device applications. Fortunato, E.; Gonçalves, A.; Pimentel, A.; Barquinha, P.; Gonçalves, G.; Pereira, L.; Ferreira, I.; Martins, R. // Applied Physics A: Materials Science & Processing;Jul2009, Vol. 96 Issue 1, p197 

    In this paper we report on some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide produced by radio frequency magnetron sputtering at room temperature, with multifunctional properties. By controlling the deposition parameters it is possible to produce...

  • Improvement in the Bias Stability of Zinc-Tin Oxide Thin-Film Transistors by Hafnium Doping. Han, Dong-Suk; Park, Jae-Hyung; Kang, Yu-Jin; Park, Jong-Wan // Journal of Electronic Materials;Aug2013, Vol. 42 Issue 8, p2470 

    The influence of hafnium (Hf) doping on negative-bias temperature instability in zinc-tin oxide thin-film transistors was studied. Hafnium-zinc-tin oxide TFTs exhibited a turn-on voltage ( V) that shifted from 0 V to −1 V with negligible changes in the subthreshold swing and field-effect...

  • Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors. Jae Gwang Um; Mativenga, Mallory; Migliorato, Piero; Jin Jang // Journal of Applied Physics;2015, Vol. 117 Issue 23, p234502-1 

    We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is...

  • Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors. Jin-Seong Park; Tae-Woong Kim; Stryakhilev, Denis; Jae-Sup Lee; Sung-Guk An; Yong-Shin Pyo; Dong-Bum Lee; Yeon Gon Mo; Dong-Un Jin; Ho Kyoon Chung // Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p013503 

    We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (μFE) of 15.1 cm2/V s,...

  • Determination of flat band voltage in thin film transistors: The case of amorphous-indium gallium zinc oxide. Migliorato, Piero; Seok, Manju; Jang, Jin // Applied Physics Letters;2/13/2012, Vol. 100 Issue 7, p073506 

    Accurate knowledge of the gap density of states (DOS) is of paramount importance for process control and modelling of thin-film transistors (TFTs). We present here an approach for flat band determination, based on the combined analysis of transfer and capacitance-voltage characteristics. The...

  • Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors. Jae Kyeong Jeong; Won Yang, Hui; Jong Han Jeong; Yeon-Gon Mo; Hye Dong Kim // Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p123508 

    We investigated the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors. While the device without any passivation layer showed a huge threshold voltage (Vth) shift under positive gate voltage stress, the suitably passivated device did not...

  • Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique. Kimura, Mutsumi; Kamiya, Toshio; Nakanishi, Takashi; Nomura, Kenji; Hosono, Hideo // Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p262105 

    Amorphous In–Ga–Zn–O (α-IGZO) is expected for thin-film transistors (TFTs) in next-generation flat-panel displays but its intrinsic properties are not understood well and different mobility models have been applied to different films. This letter reports that a universal...

  • The different roles of contact materials between oxidation interlayer and doping effect for high performance ZnO thin film transistors. Lei Xu; Chun-Wei Huang; Abliz, Ablat; Yang Hua; Lei Liao; Wen-Wei Wu; Xiangheng Xiao; Changzhong Jiang; Wei Liu; Jinchai Li // Applied Physics Letters;2/2/2015, Vol. 106 Issue 5, p1 

    To improve the performance of ZnO thin film transistors (TFTs) by using appropriate metal contacts, the different roles of contact materials between oxidation interlayer and doping effect are investigated. With careful characterization, an oxidation interlayer has been verified at the interface...

  • Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors. Jaechul Park; Ihun Song; Kim, Sunil; Sangwook Kim; Changjung Kim; Jaecheol Lee; Hyungik Lee; Eunha Lee; Huaxiang Yin; Kyoung-Kok Kim; Kee-Won Kwon; Youngsoo Park // Applied Physics Letters;8/4/2008, Vol. 93 Issue 5, p053501 

    We have demonstrated a self-aligned top-gate amorphous gallium indium zinc oxide thin film transistor (a-GIZO TFT). It had a field effect mobility of 5 cm2/V s, a threshold voltage of 0.2 V, and a subthreshold swing of 0.2 V/decade. Ar plasma was treated on the source/drain region of the a-GIZO...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics