TITLE

Optimized photocathode for spin-polarized electron sources

AUTHOR(S)
Mamaev, Yu. A.; Gerchikov, L. G.; Yashin, Yu. P.; Vasiliev, D. A.; Kuzmichev, V. V.; Ustinov, V. M.; Zhukov, A. E.; Mikhrin, V. S.; Vasiliev, A. P.
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p081114
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photocathode for highly polarized electron emission has been developed, fabricated, and studied. The photocathode is based on short-period strained AlInGaAs/AlGaAs superlattice grown by molecular beam epitaxy. Deformation of AlInGaAs quantum well results in 87 meV energy splitting between heavy hole and light hole minibands. Electron emission from the developed photocathode demonstrates maximal polarization of 92% with quantum efficiency of 0.85% at room temperature.
ACCESSION #
34198791

 

Related Articles

  • Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (1120) nonpolar direction. Teisseyre, H.; Skierbiszewski, C.; Khachapuridze, A.; Feduniewicz-Żmuda, A.; Siekacz, M.; Łucznik, B.; Kamler, G.; Krysko, M.; Suski, T.; Perlin, P.; Grzegory, I.; Porowski, S. // Applied Physics Letters;2/19/2007, Vol. 90 Issue 8, p081104 

    This letter concerns experiments on optically pumped GaN/AlGaN separate-confinement heterostructure laser structures grown by plasma assisted molecular beam epitaxy. The structures were grown along the (1120) nonpolar crystallographic direction on a bulk GaN substrate....

  • Optical transitions of a GaSb-AlSb superlattice in the 2–5 eV range. Da Silva, F. W. O.; Ance, C.; Raisin, C. // Journal of Applied Physics;10/1/1991, Vol. 70 Issue 7, p4007 

    Presents a study that reported the reflectance measurements in a GaSb-AlSb superlattice grown by molecular-beam epitaxy. Periodic arrangement of quantum wells in superlattices; Consequence of the lattice mismatch between the GaSb and AlSb layers; Structure energies present in the spectra.

  • Formation of lateral quantum wells in vertical short-period superlattices by strain-induced.... Cheng, K.Y.; Hsieh, K.C. // Applied Physics Letters;6/8/1992, Vol. 60 Issue 23, p2892 

    Examines the formation of lateral quantum wells in short-period superlattices grown on indium phosphide and gallium arsenide substrates. Application of molecular beam epitaxy; Implication of carrier confinement in quantum-wire structures for electronic and photonic device application; Variation...

  • Molecular-beam epitaxy growth of high-quality active regions with strained In[sub x]Ga[sub 1-x]As quantum wells and lattice-matched Al[sub x]Ga[sub y]In[sub (1-x-y)]As barriers using submonolayer superlattices. Reddy, M. H. M.; Huntington, A.; Buell, D.; Koda, R.; Hall, E.; Coldren, L. A. // Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3509 

    Submonolayer superlattices (SMS) of Ga[sub 0.47]In[sub 0.53]As/InAs/Ga[sub 0.47]In[sub 0.52]As and Ga[sub 0.47]In[sub 0.53]As/Al[sub 0.48]In[sub 0.52]As were used for the growth of strained quantum wells (QWs) and lattice-matched barriers, respectively, in the 1.55 μm active region. QWs grown...

  • MBE growth and characterization of 5-μm quantum-cascade lasers. Mamutin, V. V.; Ustinov, V. M.; Boetthcher, J.; Kuenzel, H. // Semiconductors;Jul2010, Vol. 44 Issue 7, p962 

    Quantum-cascade lasers, which are obtained by molecular-beam epitaxy, emit at wavelengths of 5.0 μm at 77 K and 5.2 μm at 300 K and are based on a design with four quantum wells in the active region with vertical transitions and strain-compensated superlattices with high-efficiency...

  • Formation of planar superlattice states in new grid-inserted quantum well structures. Tanaka, Masaaki; Sakaki, Hiroyuki // Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1326 

    We have prepared by molecular beam epitaxy a new type of planar superlattice (PSL), in which an array of periodically spaced AlAs bars of one monolayer (ML) in thickness is inserted in the middle of a GaAs quantum well. This grid-inserted quantum well (GI–QW) is prepared on a misoriented...

  • Optical investigation of the band structure of InAs/GaAs short-period superlattices. Gerard, J. M.; Marzin, J. Y.; d’Anterroches, C.; Soucail, B.; Voisin, P. // Applied Physics Letters;8/7/1989, Vol. 55 Issue 6, p559 

    We discuss optical data obtained on (InAs/GaAs)-InGaAlAs multiquantum well structures grown by molecular beam epitaxy. The combined use of photoluminescence and photoluminescence excitation to study such structures is an efficient test of the quality of the highly strained InAs/GaAs ordered...

  • Photoluminescence of GaAs single quantum wells confined by short-period all-binary GaAs/AlAs superlattices. Fujiwara, Kenzo; Ploog, Klaus // Applied Physics Letters;1984, Vol. 45 Issue 11, p1222 

    GaAs single quantum well heterostructures (SQWH's) composed of all-binary AlAs/GaAs heterostructures by using AlAs/GaAs short-period superlattices (SPS) instead of the ternary alloy as cladding layers were grown by molecular beam epitaxy at low substrate temperature. Detailed photoluminescence...

  • A low drive voltage electroabsorption modulator using an InGaAs/InP superlattice. Chen, C. W.; Kim, J. W.; Silvestre, P.; Hafich, M. J.; Woods, L. M.; Robinson, G. Y.; Lile, D. L. // Journal of Applied Physics;11/1/1993, Vol. 74 Issue 9, p5895 

    Presents spectral transmission, reflection, and photocurrent absorption data obtained on gas-source molecular beam epitaxy grown in indium gallium arsenide/indium phosphide multiple quantum well and superlattice (SL) p-i-n diode structures. Description of a semiconductor superlattice; Details...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics