Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method

Sun, Qing-Qing; Laha, Apurba; Ding, Shi-Jin; Zhang, David Wei; Osten, H. Jörg; Fissel, A.
August 2008
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083509
Academic Journal
Single crystalline Nd2O3 based capacitors with proper forming gas annealing treatment are fabricated. By elevating the temperature of substrate to 100 °C, near interface oxide traps are observed according to the quasistatic C-V obtained at low frequency. Two types of traps, interface traps and near interface oxide traps, are demonstrated in this gate stack. Using the low-high frequency method, the interface trap density at flatband voltage condition and the near interface oxide trap density are estimated to be 5.17×1011 eV-1 cm-2 and 3.75×1012 cm-2, respectively. The interface trap density is then further confirmed by the conductance method.


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