TITLE

Effect of atomic hydrogen on boron-doped germanium: An ab initio study

AUTHOR(S)
Wu, R. Q.; Yang, M.; Feng, Y. P.; Ouyang, Y. F.
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p082107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Interaction between interstitial hydrogen (H) and boron (B) in germanium (Ge) is studied by at initio calculations to explore the effect of hydrogen on p-type Ge. The geometry, electronic structure, and frequency of local vibrational mode (LVM) of H in the stable B–H complex are determined. The interstitial hydrogen is found to reside between the B and Ge atoms and deactivate B dopant. The dissociation energy of the defect complex is calculated to be 1.06 eV, higher than that in Si. The frequency of LVM of isolated H at the Ge–Ge bond center and at the most stable bond minimum sites is also given and compared to experimental observations.
ACCESSION #
34198781

 

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