Bandgap bowing in BGaN thin films

Ougazzaden, A.; Gautier, S.; Moudakir, T.; Djebbour, Z.; Lochner, Z.; Choi, S.; Kim, H. J.; Ryou, J.-H.; Dupuis, R. D.; Sirenko, A. A.
August 2008
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083118
Academic Journal
We report on the bandgap variation in thin films of BxGa1-xN grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical transmission, photoluminescence, and x-ray diffraction were utilized to characterize the materials’ properties of the BxGa1-xN films. In contrast to the common expectation for the bandgap variation, which is based on the linear interpolation between the corresponding GaN and BN values, a significant bowing (C=9.2±0.5 eV) of the bandgap was observed. A decrease in the optical bandgap by 150 meV with respect to that of GaN was measured for the increase in the boron composition from 0% to 1.8%.


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