Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks

Li, Z.; Schram, T.; Stesmans, A.; Franquet, A.; Witters, T.; Pantisano, L.; Yamada, N.; Tsunoda, T.; Hooker, J.; De Gendt, S.; De Meyer, K.
August 2008
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083511
Academic Journal
It was found that applying a capping layer has an important impact on the work function (WF) of Mo gated metal-oxide semiconductor stacks. Before any postmanufacturing thermal treatment, uncapped Mo has a similar WF as one capped with a TaC layer. However, after forming gas anneal (FGA), the uncapped Mo gate exhibits a significantly higher WF than the TaC capped one does. This is understood as O incorporation during deposition, storage or FGA, and its subsequent piling up at the Mo/dielectric interface during FGA in the former case, which is an effect prevented by TaC capping.


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