Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks

Tsipas, P.; Volkos, S. N.; Sotiropoulos, A.; Galata, S. F.; Galata, G.; Mavrou, G.; Tsoutsou, D.; Panayiotatos, Y.; Dimoulas, A.; Marchiori, C.; Fompeyrine, J.
August 2008
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p082904
Academic Journal
Electrical data on ZrO2/GeO2 stacks prepared by atomic oxygen beam deposition on Ge at 225 °C reveal a relatively weak dependence of the stack equivalent oxide thickness upon the ZrO2 thickness. This trend points to a very high zirconia dielectric permittivity (k) value which is estimated to be around 44. This is indicative of zirconia crystallization into a tetragonal phase which is also supported by x-ray diffraction data. X-ray photoelectron spectroscopy analysis is in line with the assumption that due to a finite GeO2 decomposition, Ge is incorporated into the growing ZrO2, thus, stabilizing the high-k tetragonal phase.


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