TITLE

Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature

AUTHOR(S)
Ikeda, S.; Hayakawa, J.; Ashizawa, Y.; Lee, Y. M.; Miura, K.; Hasegawa, H.; Tsunoda, M.; Matsukura, F.; Ohno, H.
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p082508
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300 K in Ta/Co20Fe60B20/MgO/Co20Fe60B20/Ta pseudo-spin-valve magnetic tunnel junction annealed at 525 °C. To obtain high TMR ratio, it was found critical to anneal the structure at high temperature above 500 °C, while suppressing the Ta diffusion into CoFeB electrodes and in particular to the CoFeB/MgO interface. X-ray diffraction measurement of MgO on SiO2 or Co20Fe60B20 shows that an improvement of MgO barrier quality, in terms of the degree of the (001) orientation and stress relaxation, takes place at annealing temperatures above 450 °C. The highest TMR ratio observed at 5 K was 1144%.
ACCESSION #
34198750

 

Related Articles

  • Stability and recrystallization of PbS nanoparticles. Sadovnikov, S.; Kozhevnikova, N.; Rempel, A. // Inorganic Materials;Aug2011, Vol. 47 Issue 8, p837 

    The recrystallization and thermal stability of nanocrystalline lead sulfide have been studied by X-ray diffraction and scanning electron microscopy. PbS nanoparticles ranging in size from 10 to 20 nm were prepared by chemical precipitation from aqueous solutions. To assess the thermal stability...

  • Correlation between x-ray diffraction patterns and strain distribution inside GaInP/GaAs.... He, X.G.; Erdtmann, M. // Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2812 

    Examines the correlation between x-ray diffraction characteristics and strain distribution inside gallium indium phosphide/gallium arsenic superlattices. Specification on the symmetry diffraction patterns; Demonstration of strain distribution in superlattices; Analysis on x-ray diffraction.

  • Dislocation nucleation barrier in SiGe/Si structures graded to pure Ge. Mooney, P.M.; LeGoues, F.K. // Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2845 

    Examines the strain relaxation in the layers of a silicon germanide/silicon structure graded to pure germanide using high-resolution triple-axis x-ray diffraction measurements. Explanation for the tilt of each layer; Reduction of the growth surface miscut; Variation in the material properties...

  • Bicrystallography of Nonisovalent Heterostructures with Different Crystal Lattices of the Components and Nonsingular Interfaces: GaN on LiGaO[sub 2]. Efimov, A. N.; Lebedev, A. O. // Crystallography Reports;Jan2002, Vol. 47 Issue 1, p135 

    The methodological aspects of the X-ray diffraction diagnostics of thin single-crystal layers on nonisomorphous substrates have been considered for low-symmetric crystals and nonsingular interfaces. The methods of their analysis suggested in the article allowed the determination of the stress...

  • Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction. Dietrich, B.; Bugiel, E.; Klatt, J.; Lippert, G.; Morgenstern, T.; Osten, H. J.; Zaumseil, P. // Journal of Applied Physics;9/1/1993, Vol. 74 Issue 5, p3177 

    Presents a study which measured the stress and relaxation in Si[sub1-x]Ge[subx] layers by Raman line shift and x-ray diffraction. Methods; Sample preparation; Results and discussion.

  • Deviatoric stress measurement under uniaxial compression by a powder x-ray diffraction method. Funamori, Nobumasa; Yagi, Takehiko; Uchida, Takeyuki // Journal of Applied Physics;5/1/1994, Vol. 75 Issue 9, p4327 

    Provides information on a study which determined the complete stress field in a polycrystalline sample compressed in a modified Drickamer-type apparatus from x-ray diffraction data. Methods; Results; Conclusion.

  • Depth dependence of residual strains in polycrystalline Mo thin films using high-resolution x-ray diffraction. Malhotra, S. G.; Rek, Z. U.; Yalisove, S. M.; Bilello, J. C. // Journal of Applied Physics;5/1/1996, Vol. 79 Issue 9, p6872 

    Provides information on a study that described the use of high-resolution x-ray diffraction to determine the depth dependence of strain in polycrystalline thin films. Methodology of the study; Results and discussion on the study; Conclusions.

  • Determination of stress in GaAs/Si material. Li, Chaorong; Mai, Zhenhong; Cui, Shufan; Zhou, Junmin; Ding, Aiju // Journal of Applied Physics;11/15/1989, Vol. 66 Issue 10, p4767 

    Focuses on a study which determined the stresses in gallium arsenide/silicon samples prepared under different growing conditions by the x-ray diffraction method. Discussion on the growth of high-quality gallium arsenide on silicon substrate; Methodology of the study; Results and discussion.

  • Parallel stress and perpendicular strain depth distributions in [001] silicon amorphized by ion implantation. Fabbri, R.; Servidori, M.; Zani, A. // Journal of Applied Physics;11/15/1989, Vol. 66 Issue 10, p4715 

    Deals with a study which determined the parallel stress and perpendicular strain depth distributions in silicon amorphized by ion implantation. Utilization of x-ray diffraction techniques on silicon wafers; Methodology of the study; Results and discussion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics