TITLE

Ultrathin SiO2 layer on atomically flat Si(111) surfaces with excellent electrical characteristics formed by nitric acid oxidation method

AUTHOR(S)
Woo-Byoung Kim; Matsumoto, Taketoshi; Kobayashi, Hikaru
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p072101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have developed a method of formation of atomically smooth Si/SiO2 interfaces by oxidation of atomically flat Si(111) surfaces by use of azeotropic nitric acid (HNO3) aqueous solutions (i.e., 68 wt % HNO3 at 121 °C). For the SiO2 layer on the atomically smooth Si substrates, the concentration of suboxide species, Si2+, is ∼50% of that on the rough Si substrates, and the valence band discontinuity is higher by ∼0.1 eV. In this case, the leakage current flowing through the ∼1.2 nm SiO2 is low, and further decreased by postmetallization annealing at 250 °C in hydrogen (e.g., 0.5 A/cm2 at VG=1 V).
ACCESSION #
34135677

 

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