ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures

Genest, Jonathan; Béal, Romain; Aimez, Vincent; Dubowski, Jan J.
August 2008
Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p071106
Academic Journal
Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65–150 mJ/cm2 allowed to generate an array of 1.2×1 mm2 sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material.


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