TITLE

ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures

AUTHOR(S)
Genest, Jonathan; Béal, Romain; Aimez, Vincent; Dubowski, Jan J.
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p071106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65–150 mJ/cm2 allowed to generate an array of 1.2×1 mm2 sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material.
ACCESSION #
34135649

 

Related Articles

  • Intrawell and interwell intersubband transitions in multiple quantum wells for far-infrared sources. Smet, Jurgen H.; Fonstad, Clifton G.; Hu, Qing // Journal of Applied Physics;6/15/1996, Vol. 79 Issue 12, p9305 

    Presents a theoretical study of electrically pumped unipolar lasers exploiting intrawell or interwell intersubband radiative transitions in multiple quantum-well heterostructures for the generation of infrared and far-infrared radiation. Introduction to far-infrared coherent semiconductor...

  • Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers. Fu, L.; Tan, H.H. // Journal of Applied Physics;5/1/1999, Vol. 85 Issue 9, p6786 

    Focuses on a study that used proton irradiation with subsequent rapid thermal annealing to investigate intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells. Experimental details; Results and discussion; Conclusions.

  • On the Internal Quantum Efficiency and Carrier Ejection in InGaAsP/InP-based Quantum-Well Lasers. Leshko, A. Yu.; Lyutetskii, A. V.; Pikhtin, N. A.; Skrynnikov, G. V.; Sokolova, Z. N.; Tarasov, I. S.; Fetisova, N. V. // Semiconductors;Dec2000, Vol. 34 Issue 12, p1397 

    The optimization of InGaAsP/InP quantum-well laser heterostructures that had various configurations and emitted in the wavelength range from 1.26 up to 1.55 �m was carried out with the aim of maximizing the internal quantum efficiency and output optical power. It was experimentally shown...

  • Interface flattening and optical characteristics of GaAs/Al[sub 0.3]Ga[sub 0.7]As quantum wells grown on finite patterns on a GaAs(111)B substrate. Nishida, Toshio; Kobayashi, Naoki // Applied Physics Letters;6/1/1998, Vol. 72 Issue 22 

    The formation of an atomically flat quantum well is studied by using metalorganic vapor phase epitaxy on a GaAs(111)B substrate. The surface of a 1-nm-thick GaAs layer on Al[sub 0.3]Ga[sub 0.7]As, corresponding to the upper interface of a quantum well, becomes stepfree on a 3.5-μm-wide mesa,...

  • InAs[sub 1-x]Sb[sub x]/In[sub 1-y]Ga[sub y]As multiple-quantum-well heterostructure design for.... Liau, Z.L.; Choi, H.K. // Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3219 

    Examines the strained-layer InAs[sub 1-x]Sb[sub x]/In[sub 1-y]Ga[sub y]As multiple-quantum-well (MQW) heterostructure design for laser improvement. Implication of well and barrier compositions for MQW crystal growth; Effect of compressive strain on MQW heterostructure; Relationship between hole...

  • Temperature dependence of continuous wave threshold current for 2.3-2.6 mum InGaAsSb/AlGaAsSb... Garbuzov, D.; Maiorov, M.; Lee, H.; Khalfin, V.; Martinelli, R.; Connolly, J. // Applied Physics Letters;5/17/1999, Vol. 74 Issue 20, p2990 

    Examines the dependence of spontaneous emission intensity on both current and temperature for InGaAsSb/AlGaAsSb separate-confinement-heterostructure quantum well diode lasers operating in the continuous wave and pulsed regimes. Temperature dependence of the nonradiative recombination processes;...

  • Very low threshold single quantum well graded-index separate confinement heterostructure... Tsang, W.T.; Choa, F.S.; Wu, M.C.; Chen, Y.K.; Sergent, A.M.; Sciortino Jr., P.F. // Applied Physics Letters;6/10/1991, Vol. 58 Issue 23, p2610 

    Reports that single quantum well graded-index separate confinement heterostructure InGaAs/InGaAsP lasers were grown by chemical beam epitaxy. Threshold current density of the lasers; Internal quantum efficiency and internal waveguide loss.

  • Long-Wavelength Emission in InGaAsN/GaAs Heterostructures with Quantum Wells. Volovik, B. V.; Kovsh, A. R.; Passenberg, W.; Kuenzel, H.; Ledentsov, N. N.; Ustinov, V. M. // Technical Physics Letters;May2000, Vol. 26 Issue 5, p443 

    The properties of InGaAsN/GaAs heterostructures with quantum wells on GaAs substrates were studied. The GaAsN layers containing InGaAsN quantum wells with a high (exceeding 1%) nitrogen concentration were obtained. The long-wavelength emission in the InGaAsN quantum wells is obtained in the...

  • Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well.... Baranov, A.N.; Cuminal, Bertu Y. // Applied Physics Letters;8/11/1997, Vol. 71 Issue 6, p735 

    Examines the room-temperature laser emission from type III multiple quantum well (MQW) heterostructures. Observation of intense electroluminescence; Use of special shutter sequences at the indium arsenide-gallium antimonide (InAs/GaSb) interface; Details on the emission characteristics of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics