Time-resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

Hostein, R.; Michon, A.; Beaudoin, G.; Gogneau, N.; Patriache, G.; Marzin, J.-Y.; Robert-Philip, I.; Sagnes, I.; Beveratos, A.
August 2008
Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p073106
Academic Journal
The dynamic response of InAsP quantum dots, grown on InP(001) substrates by low-pressure metalorganic vapor phase epitaxy emitting around 1.55 μm, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300 K while the integrated photoluminescence intensity decreases only by a factor of 23. These characteristics give evidence that such InAsP/InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated nonradiative recombination up to room temperature.


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