TITLE

Room temperature hydrogen detection using Pd-coated GaN nanowires

AUTHOR(S)
Lim, Wantae; Wright, J. S.; Gila, B. P.; Johnson, Jason L.; Ural, Ant; Anderson, Travis; Ren, F.; Pearton, S. J.
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p072109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Multiple GaN nanowires produced by thermal chemical vapor deposition were employed as gas sensors for detection of hydrogen at concentrations from 200–1500 ppm in N2 at 300 K. Palladium coating of the wires improved the sensitivity by a factor of up to 11 at low ppm concentrations relative to uncoated controls. The GaN nanowires showed relative responses of ∼7.4% at 200 ppm and ∼9.1% at 1500 ppm H2 in N2 after a 10 min exposure. Upon removal of hydrogen from the measurement ambient, ∼90% of the initial GaN conductance was recovered within 2 min. Temperature dependent measurements showed a larger relative response and shorter response time at elevated temperature. The adsorption activation energy of the sensor was 2.2 kcal mol-1 at 3000 ppm H2 in N2. These sensors exhibit low power consumption (<0.6 mW) at 300 K.
ACCESSION #
34135632

 

Related Articles

  • Growth and Characterization of GaN Nanowires for Hydrogen Sensors. Johnson, Jason L.; Yongho Choi; Ural, Ant; Lim, Wantae; Wright, J. S.; Gila, B. P.; Ren, F.; Pearton, S. J. // Journal of Electronic Materials;Apr2009, Vol. 38 Issue 4, p490 

    We report on the growth and characterization of high-quality GaN nanowires for hydrogen sensors. We grew the GaN nanowires by catalytic chemical vapor deposition (CVD) using gold thin films as a catalyst on a Si wafer with an insulating SiO2 layer. Structural characterization of the as-grown...

  • Strained gallium nitride nanowires. Seo, Hee Won; Bae, Seung Yong; Park, Jeunghee; Yang, Hyunik; Park, Kwang Soo; Kim, Sangsig // Journal of Chemical Physics;6/1/2002, Vol. 116 Issue 21, p9492 

    Gallium nitride nanowires were synthesized on silicon substrates by chemical vapor deposition using the reaction of gallium and gallium nitride mixture with ammonia. Iron nanoparticles were used as catalysts. The diameter of nanowires is uniform as 25 nm and the lengths are 20-40 µm. The...

  • Enhanced dynamic annealing in Ga[sup +] ion-implanted GaN nanowires. Dhara, S.; Datta, A.; Wu, C. T.; Lan, Z. H.; Chen, K. H.; Wang, Y. L.; Chen, L. C.; Hsu, C. W.; Lin, H. M.; Chen, C. C. // Applied Physics Letters;1/20/2003, Vol. 82 Issue 3, p451 

    Ga[SUP+]ion implantation of chemical-vapor-deposited GaN nanowires (NWs) is studied using a 50-keV Ga[SUP+]focused ion beam. The role of dynamic annealing (defect-annihilation) is discussed with an emphasis on the fluence-dependent defect structure. Unlike heavy-ion-irradiated epitaxial GaN...

  • Growth and characterization of gallium nitride nanowires produced on different sol-gel derived catalyst dispersed in titania and polyvinyl alcohol matrix. Chatterjee, A.; Chattopadhyay, S.; Hsu, C. W.; Shen, C. H.; Chen, L. C.; Chen, C. C.; Chen, K. H.; Lee, H. Y. // Journal of Materials Research;Jun2004, Vol. 19 Issue 6, p1768 

    Sol-gel derived catalyst systems of cobalt, nickel, and iron were used in the growth of gallium nitride (GaN) nanowires by thermal chemical vapor deposition. A diffusion barrier matrix of titania (TiO2) has been used in which the catalysts were dispersed to have control of the catalyst particle...

  • Gallium nitride nanowires doped with silicon. Ji Liu; Xiang-Min Meng, F. A.; Yang Jiang; Chun-Sing Lee; Bello, Igor; Shuit-Tong Lee // Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4241 

    High-quality GaN nanowires doped with silicon have been synthesized by hot-filament chemical vapor deposition on Au-coated Si (100) wafers. The GaN was systematically characterized by scanning electron microscopy, transmission electron microscopy, x-ray diffraction, Raman spectroscopy, and...

  • Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires. Talin, A. Alec; Wang, George T.; Lai, Elaine; Anderson, Richard J. // Applied Physics Letters;3/3/2008, Vol. 92 Issue 9, p093105 

    The photoluminescence and electrical transport of GaN nanowires grown by metal catalyzed metal-organic chemical vapor deposition were investigated as a function of substrate temperature during growth. As the growth temperature increased from 800 to 900 °C, the electrical conduction mechanism...

  • Large-scale crystalline GaN nanowires synthesized through a chemical vapor deposition method. Xiang, X.; Cao, C.B.; Zhai, H.Z.; Zhang, B.; Zhu, H.S. // Applied Physics A: Materials Science & Processing;2005, Vol. 80 Issue 5, p1129 

    Large-scale, high-density gallium nitride nanowires were successfully synthesized by the direct reaction of gallium and ammonia using gold as initiator. The as-synthesized product was characterized by XRD, SEM, TEM, SAED, and EDS. The results showed that the product is hexagonal wurtzite GaN...

  • GaN nanowire ultraviolet photodetector with a graphene transparent contact. Babichev, A. V.; Zhang, H.; Lavenus, P.; Julien, F. H.; Egorov, A. Yu.; Lin, Y. T.; Tu, L. W.; Tchernycheva, M. // Applied Physics Letters;11/11/2013, Vol. 103 Issue 20, p201103 

    We report on the fabrication of graphene contact to GaN nanowire ensemble and on the demonstration of photodetectors using chemical vapor deposition-grown few-layered graphene as a transparent electrode. The optimization of the transfer method allowed to form a continuous contact to the...

  • Effects of Precursor-Substrate Distances on the Growth of GaN Nanowires. Cheng, Hongbin; Li, Jia; Wu, Dongxu; Li, Yanxi; Wang, Zhiguang; Wang, Xianying; Zheng, Xuejun // Journal of Nanomaterials;8/12/2015, Vol. 2015, p1 

    GaN nanowires were synthesized through the Ni-catalyzed chemical vapor deposition (CVD) method using Ga2O3/GaN mixtures as gallium sources, and precursor-substrate distances were investigated as the important factor for the growth of GaN nanowires. The microstructure, composition, and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics