Zn- and O-face polarity effects at ZnO surfaces and metal interfaces

Dong, Yufeng; Fang, Z-Q.; Look, D. C.; Cantwell, G.; Zhang, J.; Song, J. J.; Brillson, L. J.
August 2008
Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p072111
Academic Journal
Depth-resolved cathodoluminescence spectroscopy, current-voltage, capacitance-voltage, and deep level transient spectroscopy of ZnO (0001) Zn- and [formula] O-polar surfaces and metal interfaces show systematically higher Zn-face near band edge emission and lower near-surface defect emission. Even with remote plasma decreases of the 2.5 eV near-surface defect emission, (0001)-Zn face emission quality still exceeds that of [formula]-O face. Ultrahigh vacuum-deposited Au and Pd diodes on as-received and O2/He plasma-cleaned surfaces display a strong polarity dependence that correlates with defect emissions, traps, and interface chemistry. A comprehensive model accounts for the polarity-dependent transport properties and their correlations with carrier concentration profiles.


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