TITLE

Strain induced change of bandgap and effective mass in silicon nanowires

AUTHOR(S)
Shiri, Daryoush; Kong, Yifan; Buin, Andrei; Anantram, M. P.
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p073114
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This work computationally investigates the electromechanical properties of hydrogen passivated silicon nanowires under uniaxial tensile strain. It has been observed that bandgap changes can be as large as 60 and 100 meV per 1% axial strain for [100] and [110] nanowires, respectively. This rate of change in the bandgap is independent of nanowire size and depends only on the growth direction. More importantly, the nature of the bandgap can reversibly change from indirect to direct as a function of strain. It is also observed that for larger diameter nanowires, the indirect-to-direct transition occurs at smaller compressive strain.
ACCESSION #
34135623

 

Related Articles

  • Impacts of size and cross-sectional shape on surface lattice constant and electron effective mass of silicon nanowires. Donglai Yao; Gang Zhang; Guo-Qiang Lo; Baowen Li // Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p113113 

    We investigate the surface lattice and electronic structure of [110] oriented hydrogen-passivated silicon nanowires (SiNWs) of different cross-sectional shapes by using the first-principles tight-binding method. Remarkable quantum confinement effects are observed on the surface lattice constant...

  • High-gain photoconductivity in semiconducting InN nanowires. Reui-San Chen; Tsang-Ho Yang; Hsin-Yi Chen; Li-Chyong Chen; Kuei-Hsien Chen; Ying-Jay Yang; Chun-Hsi Su; Chii-Ruey Lin // Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p162112 

    We report on the photoconductivity study of the individual infrared-absorbing indium nitride (InN) nanowires. Temperature-dependent dark conductivity measurement indicates the semiconducting transport behavior of these InN nanowires. An enhanced photosensitivity from 0.3 to 14 is observed by...

  • Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy. Corfdir, P.; Van Hattem, B.; Uccelli, E.; Fontcuberta i Morral, A.; Phillips, R. T. // Applied Physics Letters;9/23/2013, Vol. 103 Issue 13, p133109 

    We report results of a study of polytypic GaAs nanowires using low-temperature photoluminescence excitation spectroscopy. The nanowire ensemble shows a strong absorption at 1.517 eV, as a result of resonant generation of heavy-hole excitons in the zinc-blende segments of the nanowires. Excitons...

  • One-dimensional transport of In2O3 nanowires. Liu, Fei; Bao, Mingqiang; Wang, Kang L.; Li, Chao; Lei, Bo; Zhou, Chongwu // Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p213101 

    The gate-dependent one-dimensional transport of single-crystal In2O3 nanowire field effect transistors is studied at low temperature by measuring current (I-V) and differential conductance (dIds/dVds). At a smaller positive gate bias, gaps at near-zero source-drain bias were observed for both...

  • Large scale computer simulations of strain distribution and electron effective masses in silicon <100> nanowires. Tuma, Christian; Curioni, Alessandro // Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p193106 

    A multiscale method is proposed to analyze the internal redistribution of tensile strain applied to silicon <100> nanowires and its effect on electron effective masses m*. Nonperiodic, realistic models of unprecedented size containing up to 2.2×107 atoms (652×26×26 nm3) allow the...

  • Weak localization and quantum interference in Sn doped In2O3 nanowires. Berengue, Olivia M.; Chiquito, Adenilson J.; Pozzi, Livia P.; Lanfredi, Alexandre J. C.; Leite, Edson R. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p279 

    In this work we studied the electron transport in metallic Sn doped In2O3 (ITO) nanowires in order to quantify and identify the electron dephasing mechanisms in the samples. At high temperatures, the electron-phonon scattering is observed confirming the expected metallic behavior....

  • Direct measurement of thermal conductivity of aluminum nanowires. Stojanovic, N.; Berg, J. M.; Maithripala, D. H. S.; Holtz, M. // Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p091905 

    A nanofabricated electrothermal test structure is reported for directly measuring the thermal conductivity of aluminum nanowires near room temperature. Interdigitated nanowires perturb an otherwise symmetric heater-sensor structure analogous to an electrical bridge circuit. Nanowires studied are...

  • Size-dependent modulation of carrier mobility in top-down fabricated silicon nanowires. Sekaric, Lidija; Gunawan, Oki; Majumdar, Amlan; Xiao Hu Liu; Weinstein, Dana; Sleight, Jeffrey W. // Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p023113 

    We have investigated the size dependence of field-effect mobility in top-down fabricated Si nanowires (NWs). We find that electron mobility increases while hole mobility decreases with the NW width. The observed trends are opposite of what we expect based on facet-dominated transport. We...

  • Electronic structure of [110] PbTe nanowires. da Costa, Vania Aparecida; de Andrada e Silva, Erasmo A. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p289 

    An envelope-function model for the electronic structure of [110] square PbTe quantum wires, with simple analytical solutions, is presented based on the 4-band Dimmock kp model for the bulk. The subband structure of states for the confined electrons is obtained including band nonparabolicity and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics