Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors

Peng, J. W.; Lee, S. J.; Liang, G. C. Albert; Singh, N.; Zhu, S. Y.; Lo, G. Q.; Kwong, D. L.
August 2008
Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p073503
Academic Journal
This letter presents the performance improvement of Schottky barrier metal-oxide-semiconductor field-effect transistor by employing gate-all-around (GAA) Si-nanowire (SiNW) structure. Without employing any barrier lowering technique, the mid-band-gap Ni-silicide Schottky barrier transistors demonstrated excellent performance and achieved subthreshold slope of ∼86 mV/decade and on-current of 19 μA/μm on a 12.5 nm SiNW, and subthreshold slope of ∼79 mV/decade and on-current of 207 μA/μm on a 4 nm diameter SiNW. Assisted with simulation, we show that this improvement can be attributed to the strong reduction in the Schottky barrier thickness as a result of the better gate control of GAA SiNW structure.


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