Properties of dilute InAsN layers grown by liquid phase epitaxy

Dhar, S.; Das, T. D.; de la Mare, M.; Krier, A.
August 2008
Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p071905
Academic Journal
We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N∼0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects.


Related Articles

  • Thermal stability and atomic ordering of epitaxial Heusler alloy Co2FeSi films grown on GaAs(001). Hashimoto, M.; Herfort, J.; Schönherr, H.-P.; Ploog, K. H. // Journal of Applied Physics;11/15/2005, Vol. 98 Issue 10, p104902 

    The thermal stability and the atomic ordering of single-crystal Heusler alloy Co2FeSi layers grown by molecular beam epitaxy on GaAs(001) have been studied. We found that the Co2FeSi layers have a long-range atomic order and crystallize in a partly disordered L21 structure in the low growth...

  • Influence of the degree of order of InGaP on its hardness determined using nanoindentation. Zakaria, A.; Fetzer, C. M.; Goorsky, M. S. // Journal of Applied Physics;Oct2010, Vol. 108 Issue 7, p074908 

    Spontaneous atomic ordering takes place during metal-organic vapor phase epitaxy when certain semiconductors alloys start forming long-range arrangements different from their standard lattice unit cells. In the case of InGaP, a zincblende semiconductor, the ordered CuPt(B) structure consists of...

  • Fabrication of wide-band-gap MgxZn1-xO quasi-ternary alloys by molecular-beam epitaxy. Tanaka, Hiroshi; Fujita, Shigeo; Fujita, Shizuo // Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p192911 

    A series of wurtzite MgZnO quasi-ternary alloys, which consist of wurtzite MgO/ZnO superlattices, were grown by molecular-beam epitaxy on sapphire substrates. By changing the thicknesses of ZnO layers and/or of MgO layers of the superlattice, the band-gap energy was artificially tuned from 3.30...

  • Defect Formation in Epitaxial Layers of Cadmium Mercury Telluride Solid Solutions Highly Doped with Indium. Mvnbaev, K.D.; Ivanov-Omskii, V.I. // Technical Physics Letters;Aug2003, Vol. 29 Issue 8, p655 

    We have studied the effect of strong (up to 5 × 10[sup 21] cm[sup –3]) indium doping on the behavior of components in cadmium mercury telluride solid solutions. At an indium concentration in a modified subsurface layer on the order of 10[sup 21] cm[sup –3], these layers are...

  • X-ray double-crystal characterization of highly perfect InGaAs/InP grown by vapor-phase epitaxy. Macrander, A. T.; Strege, K. E. // Journal of Applied Physics;1/15/1986, Vol. 59 Issue 2, p442 

    Examines the X-ray double-crystal characterization of highly perfect indium gallium arsenide/indium phosphide grown by vapor-phase epitaxy. Crystal growth details; Description of double-crystal diffractometry and results; Result of calculations using dynamical diffraction theory.

  • Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering. Wu, Meng-Chyi; Chiu, Cheng-Ming // Journal of Applied Physics;1/1/1993, Vol. 73 Issue 1, p468 

    Provides information on a study that reported the liquid phase epitaxy growth and characterization of high-purity indium phosphide layers by introducing the rare-earth element erbium into the growth solutions. Method used for measuring carrier concentration; Information on the erbium doped sample.

  • Interlayer relaxation in group-III-nitride-based heterostructures according to X-Ray diffraction data. Kyutt, R. N.; Dinaev, Yu. A. // Technical Physics Letters;Nov2009, Vol. 35 Issue 11, p976 

    The structure perfection in two samples of the InN-GaN bilayer heterosystem, grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE) on (0001)-oriented sapphire substrates, has been studied by the X-Ray diffraction techniques. Components of the microdistortion tensor...

  • Transmission Electron Microscopy Study of InN Nanorods. Liliental-Weber, Z.; Li, X.; Kryliouk, O.; Park, H. J.; Mangum, J.; Anderson, T. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p111 

    InN nanorods were grown on a, c-, and r-plane of sapphire and also on Si (111) and GaN (0001) by non-catalytic, template-free hydride metal-organic vapor phase epitaxy and studied by transmission electron microscopy, electron energy loss (EELS) and photoluminescence (PL) at room temperature....

  • Synthesis of InN[sub x]P[sub 1-x] thin films by N ion implantation. Yu, K. M.; Walukiewicz, W.; Wu, J.; Beeman, J. W.; Ager, J. W.; Haller, E. E.; Shan, W.; Xin, H. P.; Tu, C. W. // Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1077 

    Dilute InN[sub x]P[sub 1-x] alloy thin films were synthesized by nitrogen ion implantation into InP using doses corresponding to N mole fraction up to 0.048. In the films with the highest N contents, it was shown using modulated photoreflectance that the fundamental band gap energy was decreased...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics