Selective disordering of InAs/InGaAs dots-in-a-well structure patterned with sol-gel derived SiO2 strips imprinted by soft mold technique

Chia, C. K.; Suryana, M.; Zhao, W.; Low, H. Y.; Hopkinson, M.
August 2008
Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p071907
Academic Journal
Selective impurity free vacancy disordering of InAs/InGaAs quantum dot (QD) structures imprinted with sol-gel derived SiO2 strips via a polyethylene terepthalate soft mold has been investigated. Wavelength blueshift of up to 220 nm for areas capped with the sol-gel derived SiO2 is demonstrated. The imprinted SiO2 strips were used as hard mask for plasma etching of GaAs ridge waveguide structures and were found to have similar hardness as the SiO2 prepared by plasma-enhanced chemical vapor deposition. QD intermixing using sol-gel derived SiO2 with step-thickness profile was demonstrated, and a one-step SiO2 imprinting technique for multiple band gap QD intermixing is proposed.


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