Blue and red electroluminescence of Europium-implanted metal-oxide-semiconductor structures as a probe for the dynamics of microstructure

Rebohle, L.; Lehmann, J.; Prucnal, S.; Kanjilal, A.; Nazarov, A.; Tyagulskii, I.; Skorupa, W.; Helm, M.
August 2008
Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p071908
Academic Journal
The strong blue and red electroluminescence from Eu-implanted SiO2 layers were investigated as a function of implantation and annealing conditions. It is shown that the red electroluminescence assigned to Eu3+ ions is favored by low Eu concentrations, low annealing temperatures, and short annealing times. Based on a more quantitative analysis of the electroluminescence spectra this preference is explained by a shorter supply of oxygen for higher Eu concentrations and the growth of Europium or Europium oxide clusters with increasing annealing temperatures and annealing times. The correlation between electroluminescence and microstructure is supported by transmission electron microscopy investigations and demonstrates that the electroluminescence of Eu-implanted SiO2 layers can serve as a probe for the microstructural development in the active layer of the light emitter.


Related Articles

  • Effects of ozone oxygenation of YBa2Cu3O7-δ thin crystals. Zhu, Yimei; Sabatini, R. L.; Wang, Y. L.; Suenaga, M. // Journal of Applied Physics;4/1/1993, Vol. 73 Issue 7, p3407 

    Reports on the effects of ozone oxygenation through annealing YBa[sub2]Cu[sub3]O[sub7-δ] thin crystals for eliminating local fluctuation in oxygen content. Changes in structural defects induced by heavy-ion radiation; Microstructure of YBa[sub2]Cu[sub3]O[sub7-δ] after ozone oxygenation.

  • Blue-light emission from sputtered Ti:SiO2 films without annealing. Hanaizumi, Osamu; Ono, Kazutake; Ogawa, Yuichi; Matsumoto, Toshiaki; Yoda, Hidehiko; Shiraishi, Kazuo // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3843 

    Blue-light emission from Ti:SiO2 sputtered films was observed at room temperature without annealing and it could be seen by the naked eye. The peaks of photoluminescence spectra were located at 3.03-3.05 eV and full width at half maximum ranged from 0.38-0.40 eV, which were almost the same in...

  • Water-related charge carrier traps in thermal silicon dioxide films prepared in dry oxygen. Emel'yanov, A. M. // Physics of the Solid State;Jun2010, Vol. 52 Issue 6, p1131 

    The parameters of electron and hole traps in thermal silicon dioxide films prepared in dry oxygen have been investigated using avalanche injection of electrons and holes from silicon in combination with measurements of capacitance-voltage and current-voltage characteristics of photoinjection of...

  • Evolution of the microstructure during annealing of porous silicon multilayers. Ott, N.; Nerding, M.; Müller, G.; Brendel, R.; Strunk, H. P. // Journal of Applied Physics;1/15/2004, Vol. 95 Issue 2, p497 

    We investigate the structural changes in porous silicon multilayers during annealing. Porous silicon multilayers play an important role in layer transfer technologies, where a thin crystalline silicon layer is separated from a wafer and transferred to a foreign substrate. High processing...

  • In-plane strain distribution in the surface region of thin silicon overlayers on insulator. Omi, Hiroo; Kawamura, Tomoaki; Fujikawa, Seiji; Tsusaka, Yoshiyuki; Kagoshima, Yasushi; Matsui, Junji // Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p263112 

    A thin silicon nano-overlayer (SNOL) fabricated by oxidation and etchback in a separation by implantation of oxygen wafer was investigated by grazing incident x-ray diffraction at incident angles between 0.01° and 0.1° below the critical angle of total reflection (0.18° ). We measured...

  • Effect of oxygen incorporation on normal and superconducting properties of MgB2 films. Singh, R. K.; Shen, Y.; Gandikota, R.; Carvalho, C.; Rowell, J. M.; Newman, N. // Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p242504 

    Oxygen was systematically incorporated in MgB2 films using in situ postgrowth anneals in an oxygen environment. Connectivity analysis in combination with measurements of the critical temperature (Tc) and resistivity (ρ) indicate that oxygen is distributed both within and between the grains....

  • Submicrostructural clusters and doping of amorphous silicon. Phillips, J. C. // Journal of Applied Physics;1/15/1986, Vol. 59 Issue 2, p383 

    Describes submicrostructural clusters and doping of amorphous silicon. Comparison of the effects of hydrogenation on the cluster dimensions with the effects of deposition or annealing temperature; Effects of annealing on the spin density; Features of the kinetic model for crystalline regrowth.

  • Nondestructive investigation of microstructures and defects at a SrTiO[sub 3] bicrystal boundary. Jiang, Q. D.; Huang, Z. J.; Brazdeikis, A.; Dezaneti, M.; Chen, C. L.; Jin, P.; Chu, C. W. // Applied Physics Letters;6/22/1998, Vol. 72 Issue 25 

    The effects of thermal annealing on the microstructure at the grain boundary of a 36.8° symmetric [100] tilt SrTiO[sub 3] bicrystal were studied. Scanning tunneling microscopy and atomic force microscopy were used for nondestructive observation of the boundary structures. Annealing the...

  • Annealing temperature and O2 partial pressure dependence of Tc in HgBa2CuO4+δ. Xiong, Q.; Cao, Y.; Chen, F.; Xue, Y. Y.; Chu, C. W. // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p7127 

    Focuses on a study which determined annealing properties of HgBa[sub2]CuO[sub 4+δ]. Crystal structure of mercury-1201; Preparation of samples; Information on the compound's oxygen content and mercury loss.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics