Tunable interband and intersubband transitions in modulation C-doped InGaAs/GaAs quantum dot lasers by postgrowth annealing process

Zhang, Z. Y.; Jiang, Q.; Hogg, R. A.
August 2008
Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p071111
Academic Journal
A bandgap and intersublevel spacing tuned laser has been realized by using a modulation C-doped InGaAs/GaAs quantum dot structure, which utilizes a postgrowth annealing process. The intermixed laser exhibits comparable light-current characteristics, indicating little detrimental change to the quantum dot laser material, and show a ground state bandgap blueshift of ∼13 nm and intersublevel energy spacing reduction of ∼30 nm compared to the unannealed device. The differences in the samples during annealing are attributed to the suppression of Ga vacancy propagation for samples with modulation C doping.


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