Physical mechanisms of hydrogen-enhanced onset of epitaxial growth of silicon by plasma-enhanced chemical vapor deposition

X. Tan; G. W. Yang
August 2008
Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p061902
Academic Journal
We have theoretically performed the detailed physical process and the temperature dependence of the hydrogen-enhanced amorphous-to-crystalline transformation of silicon upon plasma-enhanced chemical vapor deposition (PECVD) using the kinetic Monte Carlo simulations. It is found that the epitaxial silicon can be obtained at very low temperatures (T>=450 K) upon PECVD with H2 dilution. Our simulations have profound implications for closing the gap between atomic-scale and macroscopic measurements and gaining a full understanding of PECVD growth.


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