High Kondo temperature (TK∼80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

Shibata, K.; Hirakawa, K.
August 2008
Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p062101
Academic Journal
We have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, a clear Kondo effect was observed when strong coupling between the electrodes and the QDs was realized using a large QD with a diameter of ∼100 nm. From the temperature dependence of the linear conductance at the Kondo valley, the Kondo temperature TK was determined to be ∼81 K. This is the highest TK ever reported for artificial quantum nanostructures.


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