High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes

Na, Jong H.; Kitamura, M.; Arakawa, Y.
August 2008
Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p063501
Academic Journal
We report on the device characteristics of amorphous indium gallium zinc oxide thin-film transistors (TFTs) with aluminum (Al) electrodes. The TFTs exhibited a high performance with a field-effect mobility of 11.39 cm2/V s, a subthreshold swing of 181 mV/ decade, and an on-off ratio of 107. Further improvement in device performance was achieved by doping the source/drain contact regions, resulting in an enhanced mobility of 16.6 cm2/V s at an operating voltage as low as 5 V.


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