TITLE

Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

AUTHOR(S)
Darmawan, P.; M. Y. Chan; T. Zhang; Setiawan, Y.; Seng, H. L.; Chan, T. K.; Osipowicz, T.; Lee, P. S.
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p062901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Effect of Ge out diffusion into Lu2O3/Al2O3 high-k dielectric stack was investigated. Increasing Ge signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high-k film. The electrical measurement shows an improvement of the k value with annealing temperature, as well as an increasing trend in the leakage current density suggesting degradation in electrical performance due to Ge incorporation. Our work suggests that 8.8 at. % of Ge in the film is excessive and result in degradation of the electrical performance of the device due to the increased leakage current.
ACCESSION #
34000031

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics