Multiferroic BiMnO3 thin films with double SrTiO3 buffer layers

J. Y. Son; Shin, Y.-H.
August 2008
Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p062902
Academic Journal
High quality BiMnO3 thin films with double SrTiO3 buffer layers were fabricated on Pt/Ti/SiO2/Si and SrTiO3 substrates, in which SrTiO3 buffer layers were used to reduce leakage current in BiMnO3 thin films. The SrTiO3 buffer layers had a thickness of about 5 nm obtained from the fitting of ellipsometer data, which gave the remarkable enhancement in leakage current. BiMnO3 thin films exhibited the ferromagnetic transition with the Curie temperature of about 105 K. The Pt/SrTiO3/BiMnO3/SrTiO3/Pt and SrRuO3/SrTiO3/BiMnO3/SrTiO3/SrRuO3 capacitors showed good ferroelectric properties with the remanent polarization of about 9 and 16 μC/cm2, respectively.


Related Articles

  • High-sensitive switchable photodetector based on BiFeO3 film with in-plane polarization. Jie Xing; Er-Jia Guo; Jingjing Dong; Huiying Hao; Zhiyuan Zheng; Changchun Zhao // Applied Physics Letters;1/19/2015, Vol. 106 Issue 3, p1 

    A high-sensitive and fast-response photodetector based on BiFeO3 (BFO) ferroelectric thin film is fabricated using coplanar electrode configuration. A large photocurrent/dark current ratio is found up to two orders of magnitude at 1 V bias. Enhanced photocurrent and rectification behavior of the...

  • Large remanent polarization of Bi[sub 4]Ti[sub 3]O[sub 12]-based thin films modified by the site engineering technique. Watanabe, Takayuki; Kojima, Takashi; Sakai, Tomohiro; Funakubo, Hiroshi; Osada, Minoru; Noguchi, Yuji; Miyayama, Masaru // Journal of Applied Physics;8/1/2002, Vol. 92 Issue 3, p1518 

    The site engineering approach based on site-selective substitutions was utilized to improve the ferroelectric properties in Bi[sub 4]Ti[sub 3]O[sub 12] thin film. Thin films of (Bi[sub 4-χ]Nd[sub χ](Ti[sub 3-y]V[sub y])O[sub 12] with both Aand B-sites substitutions were deposited on...

  • Epitaxial growth of ferroelectric bismuth titanate thin films by pulsed laser deposition. Ramesh, R.; Luther, K.; Wilkens, B.; Hart, D. L.; Wang, E.; Tarascon, J. M.; Inam, A.; Wu, X. D.; Venkatesan, T. // Applied Physics Letters;10/8/1990, Vol. 57 Issue 15, p1505 

    Epitaxial thin films of ferroelectric bismuth titanate Bi4Ti3O12 have been grown by pulsed laser deposition on single-crystal [100] SrTiO3 substrates. Bismuth titanate has a high Curie temperature (675 °C) and saturation polarization values of 4 and 50 μC/cm2 along the c and b axis,...

  • Two-dimensional ferroelectric films. Bune, A.V.; Fridkin, V.M.; Ducharme, Stephen; Blinov, L. M.; Palto, S. P.; Sorokin, A. V.; Yudin, S. G.; Zlatkin, A. // Nature;2/26/1998, Vol. 391 Issue 6670, p874 

    Presents research which reported measurements of the ferroelectric transition in crystalline films of a random copolymer of vinylidene fluoride and trifluoroethylene. Value of ultrathin crystalline films; Observations of first-order and second-order ferromagnetic phase transitions;...

  • Ferroelectric thin films with polarization gradients normal to the growth surface. Mantese, Joseph V.; Schubring, Norman W. // Applied Physics Letters;7/31/1995, Vol. 67 Issue 5, p721 

    Details the formation of ferroelectric films with polarization gradients normal to growth surface upon coupling of temperature gradients to the polarization vector in ferroelectric materials. Variation of potential across the structure with temperature; Effect of polarization gradient on...

  • Low leakage current and enhanced ferroelectric properties of Ti and Zn codoped BiFeO3 thin film. Hu, G. D.; Fan, S. H.; Yang, C. H.; Wu, W. B. // Applied Physics Letters;5/12/2008, Vol. 92 Issue 19, p193508 

    BiFeO3 (BFO), Ti(2%)-doped BFO (BFTO), Zn(2%)-doped BFO (BFZO), as well as Ti (1%) and Zn (1%) codoped BFO (BFTZO) films were deposited on Pt/Ti/SiO2/Si substrates by using a metal organic decomposition process. Well saturated P-E hysteresis loops can be obtained in BFZO and BFTZO films due to...

  • Scaling behavior of ferroelectric hysteresis loop in pulsed-laser-deposited SrBi[sub 2]Ta[sub 2]O[sub 9] thin film. Park, Jong-Ho; Kim, Chung-Sik; Choi, Byung-Chun; Moon, Byung Kee; Jeong, Jung Hyun; Kim, Ill Won // Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p536 

    Ferroelectric SrBi[SUB2]Ta[SUB2]O[SUB9] thin films were grown on a highly oriented Pt/Ti/SiO[SUB2]/Si substrates using pulsed laser ablation. The hysteresis loop of ferroelectric SrBi[SUB2]Ta[SUB2]O[SUB9] was studied as a function of applied field amplitude. A scaling analysis of ferroelectric...

  • Ferroelectricity and ferromagnetism in (Pb, La)(Ca, Ti)O[sub 3]-La[sub 0.67]Sr[sub 0.33]MnO[sub x] multilayers. Gao, Jianxia; Zhu, Xiangrong; Liu, Weili; Zhang, Zhibin; Cao, Jianqing; Lin, Chenglu; Zhu, Dezhang; Liu, E. // Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3869 

    Multilayer ferroelectric and ferromagnetic thin films were fabricated with the following composition and structure: La[sub 0.67]Sr[sub 0.33]MnO[sub x]/(Pb, La)(Ca, Ti)O[sub 3 ](LSMO/PLCT) and (Pb, La)(Ca, Ti)O[sub 3]/La[sub 0.67]Sr[sub 0.33]MnO[sub x] (PLCT/LSMO), with an intention of creating a...

  • Ferroelectric bismuth titanate films by hot wall metalorganic chemical vapor deposition. Si, Jie; Desu, Seshu B. // Journal of Applied Physics;6/1/1993, Vol. 73 Issue 11, p7910 

    Presents information on a study which described the deposition of ferroelectric bismuth titanate thin films on silicon, sapphire disks and Pt/Ti/SiO[sub2]/Si substrates by hot wall metalorganic chemical vapor deposition. Properties of thin films; Experimental procedure; Results and discussion;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics