TITLE

Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2

AUTHOR(S)
Seo, Y. J.; Kim, K. C.; Kim, H. D.; Joo, M. S.; An, H. M.; Kim, T. G.
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p063508
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We examined the origin of the charge traps in bothSiO2/Si3N4/SiO2 (ONO) and Al2O3/Si3N4/SiO2 (ANO) structures and their effect on the memory characteristics by capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). A larger memory window was observed by C-V for ANO, due to its higher trap density. The DLTS showed that nitride traps are dominant in ANO, while more Si/SiO2 interface-related traps are observed in ONO. The ANO capacitor outperforms the ONO one in terms of both the program efficiency and retention, which is attributed to the reduced number of interface traps in ANO.
ACCESSION #
34000027

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics