Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high-k gate dielectrics using x-ray photoelectron spectroscopy

H. J. Oh; J. Q. Lin; S. J. Lee; Dalapati, G. K.; Sridhana, A.; D. Z. Chi; S. J. Chua; G. Q. Lo; D. L. Kwong
August 2008
Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p062107
Academic Journal
Interfacial reaction study using x-ray photoelectron spectroscopy was carried out for metal-organic chemical-vapor-deposited HfO2 and HfAlO gate dielectrics on p-In0.53Ga0.47As layer as compared to the cases of p-GaAs substrate. The results show that the alloying of GaAs with InAs (In0.53Ga0.47As) in the III-V channel layer and the alloying HfO2 with Al2O3 in the high-k dielectric can be an effective way to improve the interface quality due to their significant suppression effects on native oxides formation, especially arsenic oxide which causes Fermi level pinning on the high-k/III-V channel interface during the fabrication processes. Transmission electron microscopy result and the electrical characteristics of HfAlO/p-In0.53Ga0.47As capacitors further validate the x-ray photoelectron spectroscopy observations.


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