High thermoelectric efficiency in lanthanum doped Yb14MnSb11

Toberer, Eric S.; Brown, Shawna R.; Ikeda, Teruyuki; Kauzlarich, Susan M.; Snyder, G. Jeffrey
August 2008
Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p062110
Academic Journal
Lanthanum doping of the high-temperature p-type thermoelectric material Yb14MnSb11 enhances the figure of merit (zT) through carrier concentration tuning. This is achieved by substituting La3+ on the Yb2+ site to reduce the free hole concentration as expected from the change in valence. The high-temperature transport properties (Seebeck coefficient, electrical resistivity, Hall mobility, and thermal conductivity) of Yb13.6La0.4MnSb11 are explained by the change in carrier concentration using a simple rigid parabolic band model, similar to that found in Yb14Mn1-xAlxSb11. Together, use of these two dopant sites enables the partial decoupling of electronic and structural properties in Yb14MnSb11-based materials.


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