TITLE

MRAM--The Future of Non-Volatile Memory?

AUTHOR(S)
Bondurant, David; Engel, Brad; Slaughter, Jon
PUB. DATE
July 2008
SOURCE
Portable Design;Jul2008, Vol. 14 Issue 7, p16
SOURCE TYPE
Periodical
DOC. TYPE
Article
ABSTRACT
The article reports on the emergence of magnetoresistive random access memory (MRAM). The research on a new type of memory based on magnetic tunnel junction (MTJ) devices began worldwide in 1990s. The MRAM uses sub-micron MTJ devices integrated with standard complementary metal oxide semiconductors circuitry to form a high-speed, non-volatile memory. Everspin Technologies is the only company that succeed in commercializing MRAM. MRAM has been proven to be highly reliable, high-speed non-volatile memory for over two years.
ACCESSION #
33777594

 

Related Articles

  • Key Technologies for Ultra High Dose CMOS Applications. Jeon, Y.; Koo, I.; Oh, J.; Lee, S. B.; Butterbaugh, J.; Jin, S.; Lee, J.; Rouh, K.; Ju, M.; Jeon, S.; Ku, J.; Lee, S. W.; Ok, M. T.; Lee, A.; Kim, K.; Ju, K. J.; Park, J. W.; Singh, V. // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p133 

    The trend towards shrinking advanced microelectronic Logic and DRAM devices will require ultra high dose implantation. One ultra high dose application in DRAM, being rapidly adopted in production is Dual Poly Gate (DPG). Three main challenges existed for the adoption of this high dose dual poly...

  • MEASURING THE ROLE OF TECHNOLOGY-PUSH AND DEMAND-PULL IN THE DYNAMIC DEVELOPMENT OF THE SEMICONDUCTOR INDUSTRY: THE CASE OF THE GLOBAL DRAM MARKET. WONJOON KIM; JEONG-DONG LEE // Journal of Applied Economics;May2009, Vol. 12 Issue 1, p83 

    This paper reexamines and resolves the long dispute over the source of technological innovation by suggesting an integrated technology-push and demand-pull model. We derive an equilibrium model within the framework of differentiated product analysis and explain the dynamic interaction between...

  • Europe at top of core DRAM table as Hynix signs to IMEC programme. Manners, David // Electronics Weekly;12/5/2007, Issue 2315, p15 

    The article reports that the Core Dynamic random access memory (DRAM) technology is now being developed by Interuniversity Microelectronic Center (IMEC) based in Leuven, Belgium. Hynix Semiconductor Inc. has signed up to IMEC's DRAM development programme. The IMEC has development contracts with...

  • Interfacial layer growth condition dependent carrier transport mechanisms in HfO2/SiO2 gate stacks. Sahoo, S. K.; Misra, D. // Applied Physics Letters;6/4/2012, Vol. 100 Issue 23, p232903 

    The temperature and field dependent leakage current in HfO2/SiO2 gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 °C to 105 °C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant...

  • Component Pricing on Short-Lived Rise.  // Circuits Assembly;Sep2009, Vol. 20 Issue 9, p14 

    The article reports on a short-lived increase in the average global pricing of commodity electronics components by 2.3% for the 2009 third quarter sequentially. It attributes the momentary rise to shortages and a 10.2% price hike for dynamic random access memory (DRAM) chips. It predicts a 0.2%...

  • Design provides single-port-to-dual-port SDRAM converter. Yu-Chieh Chen // EDN;3/3/2011, Vol. 56 Issue 5, p45 

    The article elaborates a design for a single-port-to-dual-port synchronous dynamic random access memory (SDRAM) converter. The said converter comprises two read-first in/first-out (FIFO) and write-FIFO memory blocks and a pair of read and write controllers each that control a read-and-write data...

  • Boom Market Pits Fabs Against Foundries. Bruner, Richard // Electronic News (10616624);01/03/2000, Vol. 46 Issue 1, p16 

    Forecasts the role of foundries in the United States semiconductor industry as of January 2000. Application of dynamic random-access memory on capacity shortages in computers; Details on the plan of Motorola for its semiconductor manufacturing.

  • Untitled.  // Electronics Weekly;3/7/2012, Issue 2498, p32 

    A blog related to the dynamic random access memory (DRAM) industry, is presented.

  • In-depth: DRAM and silicon packaging.  // Electronics Weekly;8/26/2009, Issue 2395, p19 

    The article discusses the dynamic random access memory (DRAM) technology for SOC designers posted on this journal's website.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics