TITLE

Study on threading dislocations blocking mechanism of GaN/AlxGa1-xN superlattices

AUTHOR(S)
Sang, L. W.; Qin, Z. X.; Fang, H.; Zhou, X. R.; Yang, Z. J.; Shen, B.; Zhang, G. Y.
PUB. DATE
May 2008
SOURCE
Applied Physics Letters;5/12/2008, Vol. 92 Issue 19, p193110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaN/AlxGa1-xN superlattices (SLs) with different period thicknesses tp were grown as interlayers between GaN and AlyGa1-yN epilayers. The effect of threading dislocations (TDs) blocking became more evident with increasing tp. Transmission electron microscopy analysis shows that TDs are inclined to be bended in SLs and terminated in GaN wells as a result of strain. X-ray diffraction measurement also validated that GaN wells played a more important role as a TDs filter. The blocking of TDs in SLs resulted in an abnormal decrease in relaxation factors R(SLs) with increasing tp.
ACCESSION #
33547382

 

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