TITLE

Quantum-dot/quantum-well mixed-mode infrared photodetectors for multicolor detection

AUTHOR(S)
Shu-Ting Chou; Chi-Che Tseng; Cheng-Nan Chen; Wei-Hsiun Lin; Shih-Yen Lin; Meng-Chyi Wu
PUB. DATE
June 2008
SOURCE
Applied Physics Letters;6/23/2008, Vol. 92 Issue 25, p253510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Quantum-dot (QD)/quantum-well (QW) mixed-mode infrared photodetectors are demonstrated in this letter for multicolor detection in both the midwavelength infrared (MWIR) and long-wavelength infrared (LWIR) ranges. Responses at 4.3, 5.6, and 10.3 μm are observed for the device. The polarization-dependent response of the device has shown that the higher normal-incident absorption is observed for the MWIR peaks, which suggest that the intraband transitions in the QD structure are responsible for the MWIR peaks while the intraband transition in the QW region is responsible for the LWIR peak. A model is also established to explain the transition mechanisms of the device.
ACCESSION #
32990926

 

Related Articles

  • Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors. Hong, B. H.; Rybchenko, S. I.; Itskevich, I. E.; Haywood, S. K.; Tan, C. H.; Vines, P.; Hugues, M. // Journal of Applied Physics;Feb2012, Vol. 111 Issue 3, p033713 

    Intraband absorption in quantum-dot-in-a-well (DWELL) mid-infrared photodetectors is investigated using photocurrent spectroscopy and computationally cost-effective modeling linked to experimental data. The DWELL systems are challenging for modeling the electronic structure, which involves both...

  • A Novel Theoretical Procedure to Determine Absorption and Gain Coefficients in a Symmetric Single Step-Index Quantum Well Laser. Temız, Mustafa; Karakikinç, Özgur Önder; Ünal, Mehmet // Turkish Journal of Electrical Engineering & Computer Sciences;2008, Vol. 16 Issue 2, p133 

    If the indices nII, nI,III of the regions, the thickness 2a of the active region (AR) and the wavelength λ for a single symmetric step-index quantum well laser (SSSIQWL) are given, the normalized propagation constant (NPC) α is obtained. In this novel method, absorption and gain...

  • Three-color broadband asymmetric quantum well infrared photodetectors in long wavelength infrared range (LWIR). Hostut, M.; Alyoruk, M.; Ergun, Y.; Sokmen, I. // Applied Physics A: Materials Science & Processing;Feb2010, Vol. 98 Issue 2, p269 

    A theoretical investigation of a GaAs/AlGaAs-material-system-based four quantum well infrared detector structures consisting of ten periods of three asymmetric quantum well units are presented. Each quantum well in the units is sensitive to wavelengths of 8.75, 10, and 11.75 �m,...

  • GaN/AlN Quantum Wells and Quantum Dots for Unipolar Devices at Telecommunication Wavelengths. Julien, Francois H.; Guillot, Fabien; Tchernycheva, Maria; Doyennette, Laetitia; Nevou, Laurent; Vardi, Alon; Monroy, Eva; Bahir, Gad; Lupu, Anatole; Warde, Elias; Bellet-Amalric, Edith // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p525 

    We report on the latest achievements in terms of growth and optical investigation of ultrathin GaN/AlN isolated and coupled quantum wells grown by plasma-assisted molecular-beam epitaxy. We also present the observation of intraband absorption in self-organized GaN quantum dots and on the...

  • Effect of size nonuniformity on the absorption spectrum of a semiconductor quantum dot system. Wu, Wei-Yu; Schulman, J. N.; Hsu, T. Y.; Efron, Uzi // Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p710 

    The interband optical absorption of a nonuniform semiconductor quantum dot system is calculated. The effect of dot size variation on the resolvability of the absorption peaks is estimated. The dots are assumed to be cubic, with a size distribution described by a Gaussian function. It is shown...

  • Quantum-dot lasers close in on their quantum-well rivals. Mowbray, David // Laser Focus World;Jun2005, Vol. 41 Issue 6, p157 

    Reports on advances in quantum dot lasers. Self-assembly of quantum dots; Improvement in temperature stability; Comparison with their quantum well rivals.

  • I- V and Differential Conduction Characteristics of an AlGaAs/GaAs Lateral Quantum Dot Infrared Photodetector. Guidry, D.H.; Morath, C.P.; Cowan, V.M.; Cardimona, D.A. // Journal of Electronic Materials;Oct2012, Vol. 41 Issue 10, p2679 

    A new infrared detector design, henceforth referred to as a lateral quantum dot infrared photodetector (LQDIP), with the potential for a tunable internal spectral response was investigated. In this design, InAs quantum dots are buried in a GaAs quantum well, which is in turn tunnel-coupled to a...

  • High-power low-divergence 1060 nm photonic crystal laser diodes based on quantum dots. Posilovic, K.; Kalosha, V. P.; Winterfeldt, M.; Schulze, J.-H.; Quandt, D.; Germann, T. D.; Strittmatter, A.; Bimberg, D.; Pohl, J.; Weyers, M. // Electronics Letters;10/25/2012, Vol. 48 Issue 22, p1 

    GaAs-based photonic band crystal diode lasers with low vertical divergence and high output power have been designed and realised with a quantum dot active area at a wavelength of 1060 nm. Broad area lasers with 100 mm stripe width show low transparency current densities of 129 Acm-2 and high...

  • Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors. Höglund, L.; Holtz, P. O.; Pettersson, H.; Asplund, C.; Wang, Q.; Almqvist, S.; Smuk, S.; Petrini, E.; Andersson, J. Y. // Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p103501 

    The performance of quantum dots-in-a-well infrared photodetectors (DWELL IPs) has been studied by means of interband and intersubband photocurrent measurements as well as dark current measurements. Using interband photocurrent measurements, substantial escape of electrons from lower lying states...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics