TITLE

Facet dependent reactivity and selective deposition of nanometer sized β-SiC on diamond surfaces

AUTHOR(S)
Jiang, X.; Srikanth, V. V. S. S.; Zhao, Y. L.; Zhang, R. Q.
PUB. DATE
June 2008
SOURCE
Applied Physics Letters;6/16/2008, Vol. 92 Issue 24, p243107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Selective deposition of nano-β-SiC on non-{100} diamond faces has been observed in a microwave plasma chemical vapor deposition process due to the presence of Si(CH3)4 in the gas phase. The process allows only the growth of diamond starting crystals whose [001] is normal to the film surface and interrupts the growth of otherwise oriented grains; this is due to the preferential deposition of SiH3 on {111} diamond but not on {001} diamond according to additional theoretical reactivity analysis of the gas species on the exposed diamond surfaces. The facet dependent reactivity facilitates control of diamond/β-SiC nanocomposite film growth.
ACCESSION #
32970077

 

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