TITLE

Rugged, high-voltage RF transistor uses vertical process, yielding better gain

AUTHOR(S)
Rako, Paul
PUB. DATE
June 2008
SOURCE
EDN Europe;Jun2008, Vol. 53 Issue 6, p14
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
The article reports that HVVi has introduced the three member High-voltage-vertical-field-effect transistor (HVVFET), family of Radio Frequency-transistor product including low gate capacitance, low drain-to-source capacitance, and low-on resistance. It relates that these devices employ a process that uses vertical structure to provide the devices with higher density and better thermal path to the heat sink. These devices improves frequency response, efficiency, and power handling respectively.
ACCESSION #
32800041

 

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