Rugged, high-voltage RF transistor uses vertical process, yielding better gain

Rako, Paul
June 2008
EDN Europe;Jun2008, Vol. 53 Issue 6, p14
Trade Publication
The article reports that HVVi has introduced the three member High-voltage-vertical-field-effect transistor (HVVFET), family of Radio Frequency-transistor product including low gate capacitance, low drain-to-source capacitance, and low-on resistance. It relates that these devices employ a process that uses vertical structure to provide the devices with higher density and better thermal path to the heat sink. These devices improves frequency response, efficiency, and power handling respectively.


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