Negative magnetoresistance in SiC heteropolytype junctions

Lebedev, Alexander Alexandrovich; Abramov, P. L.; Agrinskaya, N. V.; Kozub, V. I.; Kuznetsov, A. N.; Lebedev, S. P.; Oganesyan, G. A.; Sorokin, L. M.; Chernyaev, A. V.; Shamshur, D. V.
August 2008
Journal of Materials Science: Materials in Electronics;Aug2008, Vol. 19 Issue 8/9, p793
Academic Journal
In this study, we carried out for the first time a galvanomagnetic investigation of 3C–SiC/6H–SiC heterostructures at liquid-helium temperatures and observed in n-3C–SiC low resistance of the samples and the appearance of a negative magnetoresistance in weak fields (~1 T). Analysis of the results we obtained shows that the low resistance is in all probability due to a metal—insulator transition in 3C–SiC epitaxial films. It was also found that the negative magnetoresistance magnitude decreases as the density of intertwine boundaries in a 3C–SiC epitaxial film becomes lower.


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