TITLE

Negative magnetoresistance in SiC heteropolytype junctions

AUTHOR(S)
Lebedev, Alexander Alexandrovich; Abramov, P. L.; Agrinskaya, N. V.; Kozub, V. I.; Kuznetsov, A. N.; Lebedev, S. P.; Oganesyan, G. A.; Sorokin, L. M.; Chernyaev, A. V.; Shamshur, D. V.
PUB. DATE
August 2008
SOURCE
Journal of Materials Science: Materials in Electronics;Aug2008, Vol. 19 Issue 8/9, p793
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this study, we carried out for the first time a galvanomagnetic investigation of 3C–SiC/6H–SiC heterostructures at liquid-helium temperatures and observed in n-3C–SiC low resistance of the samples and the appearance of a negative magnetoresistance in weak fields (~1 T). Analysis of the results we obtained shows that the low resistance is in all probability due to a metal—insulator transition in 3C–SiC epitaxial films. It was also found that the negative magnetoresistance magnitude decreases as the density of intertwine boundaries in a 3C–SiC epitaxial film becomes lower.
ACCESSION #
31975711

 

Related Articles

  • Current-induced colossal electroresistance in p-n heterostructure of La0.67Ca0.33MnO3-δ and Nb-doped SrTiO3. Zhang, X. P.; Xie, B. T.; Xiao, Y. S.; Yang, B.; Lang, P. L.; Zhao, Y. G. // Applied Physics Letters;8/15/2005, Vol. 87 Issue 7, p072506 

    We report the colossal negative electroresistance (ER) in the p-n heterostructure of La0.67Ca0.33MnO3-δ (LCMO) and Nb-doped SrTiO3. For a vacuum-annealed sample, a maximum ER of 4×104% can be reached by 1 mA current and magnetic field has remarkable influence on the ER of the sample. It...

  • Influence of length and measurement geometry on magnetoimpedance in La0.7Sr0.3MnO3. Rebello, A.; Mahendiran, R. // Applied Physics Letters;1/18/2010, Vol. 96 Issue 3, p032502 

    We show that ac magnetoresistance at room temperature in La0.7Sr0.3MnO3 is extremely high (≈-47% in μ0H=100 mT, f=3–5 MHz), and magnetic field dependence of reactance exhibits a double peak behavior. However, magnitudes of the ac magnetoresistance and magnetoreactance for a fixed...

  • Tunable magnetoresistance devices based on multiferroic heterostructures. Liu, Ming; Obi, Ogheneyunume; Lou, Jing; Li, Shandong; Xing, Xing; Yang, Guomin; Sun, Nian X. // Journal of Applied Physics;Apr2011, Vol. 109 Issue 7, p07D913 

    Surface-effect induced strong magnetoelectric (ME) coupling was investigated in ultrathin Ni80Fe20/PZN-PT (lead zinc niobate-lead titanate) multiferroic heterostructures. Giant electric field (E-field) tuning of the magnetic anisotropy, ferromagnetic resonance field, coercive field and...

  • Study of the Properties of a Two-Dimensional Electron Gas in p—-3C-SiC/n+-6H-SiC Heterostructures at Low Temperatures. Lebedev, A. A.; Nel'son, D. K.; Razbirin, B. S.; Saıdashev, I. I.; Kuznetsov, A. N.; Cherenkov, A. E. // Semiconductors;Oct2005, Vol. 39 Issue 10, p1194 

    The photoluminescence and magnetoresistance spectra of p–-3C-SiC/n+-6H-SiC heterostructures are studied at temperatures ranging from 6 to 80 K. These studies show that the heterojunction affects both the photoluminescence spectrum and the magnetoresistance. However, the rather poor...

  • Using the infrared magnetorefractive effect to compare the magnetoresistance in (100) and (111) oriented Fe3O4 films. Thompson, S. M.; Lazarov, V. K.; Bradley, R. C.; Deakin, T.; Kaeswurm, B.; Sterbinsky, G. E.; Cheng, J.; Wessels, B. W. // Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09B102-1 

    he infrared magnetorefractive effect (MRE) is used to compare the magnetoresistance (MR) in epitaxial thin films of Fe3O4 grown on MgO with (100) and (111) crystal orientations. The smaller MRE detected in the (111) film is shown to correlate with the smaller electrically measured MR, its...

  • Large enhancement of anisotropic magnetoresistance and thermal stability in Ta/NiFe/Ta trilayers with interfacial Pt addition. Liu, Y. F.; Cai, J. W.; Sun, L. // Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p092509 

    Ta/NiFe/Ta trilayers, extensively used for anisotropic magnetoresistance (AMR) sensors, exhibit severely reduced MR ratio at small NiFe thickness and appreciable moment loss, especially after annealing. By inserting ultrathin Pt layers at the interfaces of the trilayers, AMR can be significantly...

  • Metallic Mg insertion in rf deposited MgO barrier. Souza, M. M. C.; Sousa, R. C.; Ducruet, C.; Auffret, S.; Dieny, B. // Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09C702-1 

    Metallic Mg insertions in rf deposited MgO barrier of magnetic tunnel junctions structures were investigated in a resistance-area (RA) range from 1 to 1000 Ω μm2. For the first time, investigations on Mg insertions above the MgO barrier and simultaneously on both sides of the barrier are...

  • Magnetoresistance of UPt3. T. Lippman; J. Davis; H. Choi; J. Pollanen; W. Halperin // Journal of Low Temperature Physics;Sep2007, Vol. 148 Issue 5/6, p863 

    Abstract   We have performed measurements of the temperature dependence of the magnetoresistance up to 9 T in bulk single crystals of UPt3 with the magnetic field along the b-axis, the easy magnetization axis. We have confirmed previous results for transverse...

  • Junction area dependence of breakdown characteristics in magnetic tunnel junctions. Kim, Kwang-Seok; Cho, B. K.; Kim, T. W.; Park, W. J. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p8364 

    Breakdown characteristics of the magnetic tunnel junctions (MTJ) with different junction areas of S = 200 μm[SUP2] and S = 0.5 μm[SUP2] are investigated under constant voltage stress. The breakdown process is found to be quite different for the two junction areas. For the large junctions...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics