TITLE

IBM alliance touts early success for 32-nm high-k/metal gate technology

AUTHOR(S)
Miller, Matthew
PUB. DATE
April 2008
SOURCE
Electronic News;4/21/2008, Vol. 54 Issue 16, p4
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
This article reports on the positive results announced by IBM and its development partners, which included Chartered Semiconductor Manufacturing, Freescale, Infineon Technologies, Samsung Electronics, STMicroelectronics and Toshiba for a gate-stacked advance that provides significant improvements in performance and power consumption at the 32-nanometer (nm) technology node. The alliance claims that 32-nm circuits built using the technology perform up to 35 percent better and consume 45 percent less power than circuits.
ACCESSION #
31776616

 

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